%AMollah, Shahab%AHussain, Kamal%AMamun, Abdullah%AGaevski, Mikhail%ASimin, Grigory%AChandrashekhar, MVS%AKhan, Asif%Anull Ed.%BJournal Name: Applied Physics Express; Journal Volume: 14; Journal Issue: 1 %D2021%I %JJournal Name: Applied Physics Express; Journal Volume: 14; Journal Issue: 1 %K %MOSTI ID: 10293930 %PMedium: X %THigh-current recessed gate enhancement-mode ultrawide bandgap Al x Ga 1−x N channel MOSHFET with drain current 0.48 A mm −1 and threshold voltage +3.6 V %X %0Journal Article