%AMollah, Shahab%AHussain, Kamal%AMamun, Abdullah%AGaevski, Mikhail%ASimin, Grigory%AChandrashekhar, MVS%AKhan, Asif%Anull Ed.%BJournal Name: Applied Physics Express; Journal Volume: 14; Journal Issue: 1
%D2021%I
%JJournal Name: Applied Physics Express; Journal Volume: 14; Journal Issue: 1
%K
%MOSTI ID: 10293930
%PMedium: X
%THigh-current recessed gate enhancement-mode ultrawide bandgap Al x Ga 1−x N channel MOSHFET with drain current 0.48 A mm −1 and threshold voltage +3.6 V
%X
%0Journal Article