%AModak, Sushrut%AChernyak, Leonid%AKhodorov, Sergey%ALubomirsky, Igor%ARuzin, Arie%AXian, Minghan%ARen, Fan%APearton, Stephen%BJournal Name: ECS Journal of Solid State Science and Technology; Journal Volume: 9; Journal Issue: 4; Related Information: CHORUS Timestamp: 2021-11-25 16:03:06 %D2020%IThe Electrochemical Society %JJournal Name: ECS Journal of Solid State Science and Technology; Journal Volume: 9; Journal Issue: 4; Related Information: CHORUS Timestamp: 2021-11-25 16:03:06 %K %MOSTI ID: 10303349 %PMedium: X %TEffect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga 2 O 3 Schottky Rectifiers %X

We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014cm−2) Si-dopedβ-Ga2O3Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhancesLfrom 330 nm to 726 nm at room temperature. The rate of increase forLis lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-dopedβ-Ga2O3Schottky rectifiers is presented.

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