%AEncomendero, Jimy%AProtasenko, Vladimir%AJena, Debdeep%AXing, Huili%BJournal Name: Applied Physics Express; Journal Volume: 14; Journal Issue: 12 %D2021%I %JJournal Name: Applied Physics Express; Journal Volume: 14; Journal Issue: 12 %K %MOSTI ID: 10325351 %PMedium: X %TInfluence of collector doping setback in the quantum transport characteristics of GaN/AlN resonant tunneling diodes %XAbstract Harnessing resonant tunneling transport in III-nitride semiconductors to boost the operating frequencies of electronic and photonic devices, requires a thorough understanding of the mechanisms that limit coherent tunneling injection. Towards this goal, we present a concerted experimental and theoretical study that elucidates the impact of the collector doping setback on the quantum transport characteristics of GaN/AlN resonant tunneling diodes (RTDs). Employing our analytical model for polar RTDs, we quantify the width of the resonant-tunneling line shape, demonstrating that the setback helps preserve coherent injection. This design results in consistently higher peak-to-valley-current ratios (PVCRs), obtaining a maximum PVCR = 2.01 at cryogenic temperatures. %0Journal Article