%AShoron, Omor%AShoron, Omor [Materials Department, University of California, Santa Barbara, California 93106-5050, USA]%AKealhofer, David%AKealhofer, David [Materials Department, University of California, Santa Barbara, California 93106-5050, USA]%AGoyal, Manik%AGoyal, Manik [Materials Department, University of California, Santa Barbara, California 93106-5050, USA]%ASchumann, Timo%ASchumann, Timo [Materials Department, University of California, Santa Barbara, California 93106-5050, USA]%ABurkov, Anton%ABurkov, Anton [Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada]%AStemmer, Susanne%AStemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050, USA]%BJournal Name: Applied Physics Letters; Journal Volume: 119; Journal Issue: 17; Related Information: CHORUS Timestamp: 2023-06-18 11:49:58 %D2021%IAmerican Institute of Physics %JJournal Name: Applied Physics Letters; Journal Volume: 119; Journal Issue: 17; Related Information: CHORUS Timestamp: 2023-06-18 11:49:58 %K %MOSTI ID: 10359877 %PMedium: X %TDetecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance %X

Topological protection against localization causes electrical transport phenomena in disordered topological materials to differ from those in topologically trivial systems. For example, a transition between a regime of weak localization to one of weak antilocalization can occur in systems such as topological insulators and topological semimetals when an external potential is applied across the system. Here, we report on the transverse magnetoresistance of thin films of cadmium arsenide, a topologically nontrivial, as we tune the electronic states and the Fermi level. We show that the appearance of weak localization and weak antilocalization sensitively reflects the relative contributions of multiple transport channels involving both gapless (massless) and gapped (massive) Dirac fermion states present in these films. The data are consistent with expectations of the different topological states of these films. Weak (anti-)localization phenomena can, therefore, serve as a probe of the types of Dirac fermions present in topological semimetals.

%0Journal Article