%APan, Quanjun [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%ALiu, Yuting [School of Material Science and Engineering Harbin Institute of Technology Shenzhen Guangdong 518055 China, Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong China]%AWu, Hao [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA, Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China]%AZhang, Peng [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%AHuang, Hanshen [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%AEckberg, Christopher [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA, Fibertek Inc. Herndon VA 20171 USA, US Army Research Laboratory Adelphi MD 20783 USA, US Army Research Laboratory Playa Vista CA 90094 USA]%AChe, Xiaoyu [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%AWu, Yingying [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%ADai, Bingqian [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%AShao, Qiming [Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong China]%AWang, Kang [Department of Electrical and Computer Engineering Department of Physics and Astronomy and Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA]%BJournal Name: Advanced Electronic Materials; Journal Volume: 8; Journal Issue: 9; Related Information: CHORUS Timestamp: 2023-08-22 21:06:33 %D2022%IWiley Blackwell (John Wiley & Sons) %JJournal Name: Advanced Electronic Materials; Journal Volume: 8; Journal Issue: 9; Related Information: CHORUS Timestamp: 2023-08-22 21:06:33 %K %MOSTI ID: 10370784 %PMedium: X %TEfficient Spin‐Orbit Torque Switching of Perpendicular Magnetization using Topological Insulators with High Thermal Tolerance %XAbstract

Recent advances in using topological insulators (TIs) with ferromagnets (FMs) at room temperature have opened an innovative avenue in spin‐orbit torque (SOT) nonvolatile magnetic memory and low dissipation electronics. However, direct integration of TIs with perpendicularly magnetized FM, while retaining an extraordinary charge‐to‐spin conversion efficiency (>100%), remains a major challenge. In addition, the indispensable thermal compatibility with modern CMOS technologies has not yet been demonstrated in TI‐based structures. Here, high‐quality integration of a perpendicularly magnetized CoFeB/MgO system with TI through a Mo insertion layer is achieved and efficient current‐induced magnetization switching at ambient temperature is demonstrated. The calibrated energy efficiency of TIs is at least 1 order magnitude larger than those found in heavy metals. Moreover, it is demonstrated that the perpendicular anisotropy of the integrated CoFeB/MgO system and the current‐induced magnetization switching behavior are well‐preserved after annealing at>350 °C, offering a wide temperature window for thermal treatments. This thermal compatibility with the modern CMOS back‐end‐of‐line process achieved in these TI‐based structures paves the way toward TI‐based low‐dissipation spintronic applications.

%0Journal Article