%APan, Quanjun [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%ALiu, Yuting [School of Material Science and Engineering Harbin Institute of Technology Shenzhen Guangdong 518055 China, Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong China]%AWu, Hao [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA, Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China]%AZhang, Peng [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%AHuang, Hanshen [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%AEckberg, Christopher [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA, Fibertek Inc. Herndon VA 20171 USA, US Army Research Laboratory Adelphi MD 20783 USA, US Army Research Laboratory Playa Vista CA 90094 USA]%AChe, Xiaoyu [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%AWu, Yingying [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%ADai, Bingqian [Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA]%AShao, Qiming [Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong China]%AWang, Kang [Department of Electrical and Computer Engineering Department of Physics and Astronomy and Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA]%BJournal Name: Advanced Electronic Materials; Journal Volume: 8; Journal Issue: 9; Related Information: CHORUS Timestamp: 2023-08-22 21:06:33 %D2022%IWiley Blackwell (John Wiley & Sons) %JJournal Name: Advanced Electronic Materials; Journal Volume: 8; Journal Issue: 9; Related Information: CHORUS Timestamp: 2023-08-22 21:06:33 %K %MOSTI ID: 10370784 %PMedium: X %TEfficient Spin‐Orbit Torque Switching of Perpendicular Magnetization using Topological Insulators with High Thermal Tolerance %X
Recent advances in using topological insulators (TIs) with ferromagnets (FMs) at room temperature have opened an innovative avenue in spin‐orbit torque (SOT) nonvolatile magnetic memory and low dissipation electronics. However, direct integration of TIs with perpendicularly magnetized FM, while retaining an extraordinary charge‐to‐spin conversion efficiency (