%ALi, Mingxiao%AChang, Lin%AWu, Lue%AStaffa, Jeremy%ALing, Jingwei%AJavid, Usman%AXue, Shixin%AHe, Yang%ALopez-rios, Raymond%AMorin, Theodore%AWang, Heming%AShen, Boqiang%AZeng, Siwei%AZhu, Lin%AVahala, Kerry%ABowers, John%ALin, Qiang%BJournal Name: Nature Communications; Journal Volume: 13; Journal Issue: 1; Related Information: CHORUS Timestamp: 2022-10-05 10:16:40 %D2022%INature Publishing Group; None %JJournal Name: Nature Communications; Journal Volume: 13; Journal Issue: 1; Related Information: CHORUS Timestamp: 2022-10-05 10:16:40 %K %MOSTI ID: 10373278 %PMedium: X %TIntegrated Pockels laser %XAbstract

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 1018Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.

%0Journal Article