%AKunwar, Sundar [Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA]%ASomodi, Chase [Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA]%ALalk, Rebecca [Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA]%ARutherford, Bethany [Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA, School of Materials Engineering Purdue University West Lafayette IN 47907 USA]%ACorey, Zachary [Department of Materials Design and Innovation University at Buffalo – The State University of New York Buffalo NY 14260 USA]%ARoy, Pinku [Department of Materials Design and Innovation University at Buffalo – The State University of New York Buffalo NY 14260 USA]%AZhang, Di [Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA]%AHellenbrand, Markus [Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UK]%AXiao, Ming [Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UK]%AMacManus‐Driscoll, Judith [Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UK]%AJia, Quanxi [Department of Materials Design and Innovation University at Buffalo – The State University of New York Buffalo NY 14260 USA]%AWang, Haiyan [School of Materials Engineering Purdue University West Lafayette IN 47907 USA]%AJoshua Yang, J. [Department of Electrical and Computer Engineering University of Southern California Los Angeles CA 90089 USA]%ANie, Wanyi [Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA]%AChen, Aiping [Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA]%BJournal Name: Advanced Electronic Materials; Journal Volume: 9; Journal Issue: 1; Related Information: CHORUS Timestamp: 2023-08-20 04:38:36 %D2022%IWiley Blackwell (John Wiley & Sons) %JJournal Name: Advanced Electronic Materials; Journal Volume: 9; Journal Issue: 1; Related Information: CHORUS Timestamp: 2023-08-20 04:38:36 %K %MOSTI ID: 10390618 %PMedium: X %TProtons: Critical Species for Resistive Switching in Interface‐Type Memristors %XAbstract

Interface‐type (IT) resistive switching (RS) memories are promising for next generation memory and computing technologies owing to the filament‐free switching, high on/off ratio, low power consumption, and low spatial variability. Although the switching mechanisms of memristors have been widely studied in filament‐type devices, they are largely unknown in IT memristors. In this work, using the simple Au/Nb:SrTiO3(Nb:STO) as a model Schottky system, it is identified that protons from moisture are key element in determining the RS characteristics in IT memristors. The Au/Nb:STO devices show typical Schottky interface controlled current–voltage (IV) curves with a large on/off ratio under ambient conditions. Surprisingly, in a controlled environment without protons/moisture, the largeIVhysteresis collapses with the disappearance of a high resistance state (HRS) and the Schottky barrier. Once the devices are re‐exposed to a humid environment, the typical largeIVhysteresis can be recovered within hours as the HRS and Schottky interface are restored. The RS mechanism in Au/Nb:STO is attributed to the Schottky barrier modulation by a proton assisted electron trapping and detrapping process. This work highlights the important role of protons/moisture in the RS properties of IT memristors and provides fundamental insight for switching mechanisms in metal oxides‐based memory devices.

%0Journal Article