%ASomayazulu, M.%AAhart, M.%AMeng, Y.%ACiezak, J.%AVelisavlevic, N.%AHemley, R.%BJournal Name: Philosophical transactions A; Journal Volume: 381
%D2023%I
%JJournal Name: Philosophical transactions A; Journal Volume: 381
%K
%MOSTI ID: 10447049
%PMedium: X
%TP-V-T equation of state of boron carbide
%XWe report the P-V-T equation of state measurements
of B4C to 50GPa and approximately 2500K in
laser-heated diamond anvil cells. We obtain an
ambient temperature, third-order Birch–Murnaghan
fit to the P-V data that yields a bulk modulus K0
of 221(2) GPa and derivative, (dK/dP)0 of 3.3(1).
These were used in fits with both a Mie–Grüneisen–
Debye model and a temperature-dependent, Birch–
Murnaghan equation of state that includes thermal
pressure estimated by thermal expansion (α) and
a temperature-dependent bulk modulus (dK0/dT).
The ambient pressure thermal expansion coefficient
(α0+α1T), Grüneisen γ (V)=γ 0(V/V0)q and volumedependent
Debye temperature, were used as input
parameters for these fits and found to be sufficient to
describe the data in the whole P-T range of this study.
%0Journal Article