<?xml version="1.0" encoding="UTF-8"?><rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcq="http://purl.org/dc/terms/"><records count="1" morepages="false" start="1" end="1"><record rownumber="1"><dc:product_type>Journal Article</dc:product_type><dc:title>Nanoionic Resistive‐Switching Devices</dc:title><dc:creator>Zhu, Xiaojian; Lee, Seung Hwan; Lu, Wei D.</dc:creator><dc:corporate_author/><dc:editor/><dc:description/><dc:publisher/><dc:date>2018-11-16</dc:date><dc:nsf_par_id>10177050</dc:nsf_par_id><dc:journal_name>Advanced Electronic Materials</dc:journal_name><dc:journal_volume>5</dc:journal_volume><dc:journal_issue>9</dc:journal_issue><dc:page_range_or_elocation>1900184</dc:page_range_or_elocation><dc:issn>2199-160X</dc:issn><dc:isbn/><dc:doi>https://doi.org/10.1002/aelm.201900184</dc:doi><dcq:identifierAwardId>1810119; 1708700</dcq:identifierAwardId><dc:subject/><dc:version_number/><dc:location/><dc:rights/><dc:institution/><dc:sponsoring_org>National Science Foundation</dc:sponsoring_org></record></records></rdf:RDF>