<?xml version="1.0" encoding="UTF-8"?><rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcq="http://purl.org/dc/terms/"><records count="1" morepages="false" start="1" end="1"><record rownumber="1"><dc:product_type>Journal Article</dc:product_type><dc:title>2D MoS &lt;sub&gt;2&lt;/sub&gt; -Based Threshold Switching Memristor for Artificial Neuron</dc:title><dc:creator>Dev, Durjoy; Krishnaprasad, Adithi; Shawkat, Mashiyat S.; He, Zhezhi; Das, Sonali; Fan, Deliang; Chung, Hee-Suk; Jung, Yeonwoong; Roy, Tania</dc:creator><dc:corporate_author/><dc:editor>null</dc:editor><dc:description/><dc:publisher/><dc:date>2020-06-01</dc:date><dc:nsf_par_id>10211258</dc:nsf_par_id><dc:journal_name>IEEE Electron Device Letters</dc:journal_name><dc:journal_volume>41</dc:journal_volume><dc:journal_issue>6</dc:journal_issue><dc:page_range_or_elocation>936 to 939</dc:page_range_or_elocation><dc:issn>0741-3106</dc:issn><dc:isbn/><dc:doi>https://doi.org/10.1109/LED.2020.2988247</dc:doi><dcq:identifierAwardId>1845331</dcq:identifierAwardId><dc:subject/><dc:version_number/><dc:location/><dc:rights/><dc:institution/><dc:sponsoring_org>National Science Foundation</dc:sponsoring_org></record></records></rdf:RDF>