<?xml version="1.0" encoding="UTF-8"?><rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcq="http://purl.org/dc/terms/"><records count="1" morepages="false" start="1" end="1"><record rownumber="1"><dc:product_type>Journal Article</dc:product_type><dc:title>&lt;i&gt;In situ&lt;/i&gt; monitoring of electrical and optoelectronic properties of suspended graphene ribbons during laser-induced morphological changes</dc:title><dc:creator>Zhang, Xiaosi; Walmsley, Thayer S.; Xu, Ya-Qiong</dc:creator><dc:corporate_author/><dc:editor>null</dc:editor><dc:description>Exploring ways to tune and improve the performance of graphene is of paramount importance in creating functional graphene-based electronic and optoelectronic devices. Recent advancements have shown that altering the morphology of graphene can have a pronounced effect on its properties. Here, we present a practical and facile method to manipulate the morphology of a suspended graphene ribbon using a laser to locally induce heating while monitoring its electrical and optoelectronic properties              in situ              . Electrical measurements reveal that the conductance of suspended graphene transistors can be tuned by modifying its morphology. Additionally, scanning photocurrent measurements show that laser-induced folded graphene ribbons display significantly enhanced localized photocurrent responses in comparison with their flat counterparts. Moreover, the localization of the laser-induced heating allows for a series of folds to be induced along the entire graphene ribbon, creating targeted photocurrent enhancement. Through further investigations, it is revealed that the photo-thermoelectric effect is the primary mechanism for the increased photocurrent response of the device. Our experimental results explore the mechanisms and consequences of the folding process as well as provide a strategy to manipulate morphology and physical properties of graphene for future engineering of electronics and optoelectronics.</dc:description><dc:publisher/><dc:date>2020-09-15</dc:date><dc:nsf_par_id>10258179</dc:nsf_par_id><dc:journal_name>Nanoscale Advances</dc:journal_name><dc:journal_volume>2</dc:journal_volume><dc:journal_issue>9</dc:journal_issue><dc:page_range_or_elocation>4034 to 4040</dc:page_range_or_elocation><dc:issn>2516-0230</dc:issn><dc:isbn/><dc:doi>https://doi.org/10.1039/D0NA00413H</dc:doi><dcq:identifierAwardId>1810088</dcq:identifierAwardId><dc:subject/><dc:version_number/><dc:location/><dc:rights/><dc:institution/><dc:sponsoring_org>National Science Foundation</dc:sponsoring_org></record></records></rdf:RDF>