Journal ArticlePhotoluminescence from GaN Implanted with Be and FReshchikov, Michael Alexander; Andrieiev, Oleksandr; Vorobiov, Mykhailo; Demchenko, Denis O.; McEwen, Benjamin; Shahedipour-Sandvik, ShadiGaN samples were implanted with Be and F and annealed in different conditions to activate the BeGa acceptors. Photoluminescence spectra were studied to recognize the defects. The UVLBe band with a maximum at 3.38 eV and the YLBe band with a maximum at 2.15 eV were observed and associated with Be. The sequential implantation of Be and F ions into GaN at 600 °C reduces the concentration of nitrogen vacancies (VN), as evidenced by the lack of the green luminescence band associated with the isolated nitrogen vacancy. First‐principles calculations were employed to find parameters of defects that can form after implantation.2023-05-1610429919physica status solidi (b)23001310370-1972https://doi.org/10.1002/pssb.2023001311904861National Science Foundation