<?xml version="1.0" encoding="UTF-8"?><rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcq="http://purl.org/dc/terms/"><records count="1" morepages="false" start="1" end="1"><record rownumber="1"><dc:product_type>Journal Article</dc:product_type><dc:title>MOCVD Growth and Characterization of Be-Doped GaN</dc:title><dc:creator>McEwen, Benjamin; Reshchikov, Michael A.; Rocco, Emma; Meyers, Vincent; Hogan, Kasey; Andrieiev, Oleksandr; Vorobiov, Mykhailo; Demchenko, Denis O.; Shahedipour-Sandvik, Fatemeh</dc:creator><dc:corporate_author/><dc:editor/><dc:description/><dc:publisher/><dc:date>2022-08-23</dc:date><dc:nsf_par_id>10430051</dc:nsf_par_id><dc:journal_name>ACS Applied Electronic Materials</dc:journal_name><dc:journal_volume>4</dc:journal_volume><dc:journal_issue>8</dc:journal_issue><dc:page_range_or_elocation>3780 to 3785</dc:page_range_or_elocation><dc:issn>2637-6113</dc:issn><dc:isbn/><dc:doi>https://doi.org/10.1021/acsaelm.1c01276</dc:doi><dcq:identifierAwardId>1904861</dcq:identifierAwardId><dc:subject/><dc:version_number/><dc:location/><dc:rights/><dc:institution/><dc:sponsoring_org>National Science Foundation</dc:sponsoring_org></record></records></rdf:RDF>