<?xml version="1.0" encoding="UTF-8"?><rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcq="http://purl.org/dc/terms/"><records count="1" morepages="false" start="1" end="1"><record rownumber="1"><dc:product_type>Journal Article</dc:product_type><dc:title>Correction to “Layered Semiconductor Cr &lt;sub&gt;0.32&lt;/sub&gt; Ga &lt;sub&gt;0.68&lt;/sub&gt; Te &lt;sub&gt;2.33&lt;/sub&gt; with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate”</dc:title><dc:creator>Guan, Yingdong; Miao, Leixin; He, Jingyang; Ning, Jinliang; Chen, Yangyang; Xie, Weiwei; Sun, Jianwei; Gopalan, Venkatraman; Zhu, Jun; Wang, Xiaoping; Alem, Nasim; Zhang, Qiang; Mao, Zhiqiang</dc:creator><dc:corporate_author/><dc:editor/><dc:description/><dc:publisher>American Chemical Society Publications</dc:publisher><dc:date>2023-10-04</dc:date><dc:nsf_par_id>10542203</dc:nsf_par_id><dc:journal_name>Journal of the American Chemical Society</dc:journal_name><dc:journal_volume>145</dc:journal_volume><dc:journal_issue>39</dc:journal_issue><dc:page_range_or_elocation>21696 to 21696</dc:page_range_or_elocation><dc:issn>0002-7863</dc:issn><dc:isbn/><dc:doi>https://doi.org/10.1021/jacs.3c09488</dc:doi><dcq:identifierAwardId>2011839</dcq:identifierAwardId><dc:subject/><dc:version_number/><dc:location/><dc:rights/><dc:institution/><dc:sponsoring_org>National Science Foundation</dc:sponsoring_org></record></records></rdf:RDF>