<?xml version="1.0" encoding="UTF-8"?><rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcq="http://purl.org/dc/terms/"><records count="1" morepages="false" start="1" end="1"><record rownumber="1"><dc:product_type>Journal Article</dc:product_type><dc:title>Widely tunable room temperature semiconductor terahertz source</dc:title><dc:creator>Lu, Q Y; Slivken, S; Bandyopadhyay, N; Bai, Y; Razeghi, M</dc:creator><dc:corporate_author/><dc:editor/><dc:description>&lt;p&gt;We present a widely tunable, monolithic terahertz source based on intracavity difference frequency generation within a mid-infrared quantum cascade laser at room temperature. A three-section ridge waveguide laser design with two sampled grating sections and a distributed-Bragg section is used to achieve the terahertz (THz) frequency tuning. Room temperature single mode THz emission with a wide tunable frequency range of 2.6–4.2 THz (∼47% of the central frequency) and THz power up to 0.1 mW is demonstrated, making such device an ideal candidate for THz spectroscopy and sensing.&lt;/p&gt;</dc:description><dc:publisher>AIP Publishing</dc:publisher><dc:date>2014-11-17</dc:date><dc:nsf_par_id>10596301</dc:nsf_par_id><dc:journal_name>Applied Physics Letters</dc:journal_name><dc:journal_volume>105</dc:journal_volume><dc:journal_issue>20</dc:journal_issue><dc:page_range_or_elocation/><dc:issn>0003-6951</dc:issn><dc:isbn/><dc:doi>https://doi.org/10.1063/1.4902245</dc:doi><dcq:identifierAwardId>2149908</dcq:identifierAwardId><dc:subject/><dc:version_number/><dc:location/><dc:rights/><dc:institution/><dc:sponsoring_org>National Science Foundation</dc:sponsoring_org></record></records></rdf:RDF>