<?xml version="1.0" encoding="UTF-8"?><rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcq="http://purl.org/dc/terms/"><records count="1" morepages="false" start="1" end="1"><record rownumber="1"><dc:product_type>Journal Article</dc:product_type><dc:title>A Low-Power Differential Temperature Sensor with Chopped Cascode Transistors and Switched-Capacitor Integration</dc:title><dc:creator>Yang, Junyi; Gourousis, Thomas; Yan, Mengting; Ding, Ruyi; Mittal, Ankit; Zhang, Milin; Restuccia, Francesco; Shrivastava, Aatmesh; Fei, Yunsi; Onabajo, Marvin</dc:creator><dc:corporate_author/><dc:editor/><dc:description>&lt;p&gt;Embedded differential temperature sensors can be utilized to monitor the power consumption of circuits, taking advantage of the inherent on-chip electrothermal coupling. Potential applications range from hardware security to linearity, gain/bandwidth calibration, defect-oriented testing, and compensation for circuit aging effects. This paper introduces the use of on-chip differential temperature sensors as part of a wireless Internet of Things system. A new low-power differential temperature sensor circuit with chopped cascode transistors and switched-capacitor integration is described. This design approach leverages chopper stabilization in combination with a switched-capacitor integrator that acts as a low-pass filter such that the circuit provides offset and low-frequency noise mitigation. Simulation results of the proposed differential temperature sensor in a 65 nm complementary metal-oxide-semiconductor (CMOS) process show a sensitivity of 33.18V/°C within a linear range of ±36.5m°C and an integrated output noise of 0.862mVrms (from 1 to 441.7 Hz) with an overall power consumption of 0.187mW. Considering a figure of merit that involves sensitivity, linear range, noise, and power, the new temperature sensor topology demonstrates a significant improvement compared to state-of-the-art differential temperature sensors for on-chip monitoring of power dissipation.&lt;/p&gt;</dc:description><dc:publisher>Electronics</dc:publisher><dc:date>2025-06-01</dc:date><dc:nsf_par_id>10630374</dc:nsf_par_id><dc:journal_name>Electronics</dc:journal_name><dc:journal_volume>14</dc:journal_volume><dc:journal_issue>12</dc:journal_issue><dc:page_range_or_elocation>2381</dc:page_range_or_elocation><dc:issn>2079-9292</dc:issn><dc:isbn/><dc:doi>https://doi.org/10.3390/electronics14122381</dc:doi><dcq:identifierAwardId>2218845; 2146754; 2225368; 2229472</dcq:identifierAwardId><dc:subject/><dc:version_number/><dc:location/><dc:rights/><dc:institution/><dc:sponsoring_org>National Science Foundation</dc:sponsoring_org></record></records></rdf:RDF>