Journal ArticleInvestigation of MOCVD Growth and Process Conditions on the Efficacy of a Simplified GaAs‐on‐Si Virtual Substrate ApproachKaliszewski, Lauren M [Department of Materials Science &amp; Engineering The Ohio State University Columbus Ohio USA] (ORCID:0009000960786248); Grassman, Tyler J [Department of Electrical &amp; Computer Engineering The Ohio State University Columbus Ohio USA] (ORCID:0000000232273017)<p>The efficacy of metal‐organic chemical vapor deposition (MOCVD)‐based growth for the production of GaAs‐on‐Si virtual substrates following a recently reported process combining low‐temperature growth, thermal cyclic annealing (TCA), and an asymmetric step‐graded filter (ASG) structure is investigated. The impact of multiple process variables—substrate offcut, V/III molecular flux ratio, growth rate, and growth and annealing temperatures—with respect to resultant surface roughness (<italic>R</italic>_q) and threading dislocation density (TDD) is examined. Similar trends as those reported for the original molecular beam epitaxy‐based process are observed in<italic>R</italic>_qand TDD for growths on both 2° and 6° offcut substrates. MOCVD process conditions are established for a reduced‐thickness design yielding GaAs virtual substrates on 2° and 6° offcut Si with TDD (≤4.0 × 10⁶ cm⁻²) and<italic>R</italic>_q(2.4 and 5.3 nm, respectively), comparable to conventional graded buffers, but with a total III–V thickness of less than 2.0 µm.</p>Wiley2025-12-0110650998physica status solidi (a)1862-6300https://doi.org/10.1002/pssa.2025003272047308National Science Foundation