Journal ArticleSolid-phase heteroepitaxy of oriented Sb2Se3 on GaAs for birefringent thin filmsXiao, Kelly (ORCID:0000000321000838); Shen, Yuejun; Vailionis, Arturas (ORCID:0000000158781864); Skipper, Alec M (ORCID:0000000259047941); Preidl, Anna-Katharina; Lindenberg, Aaron M (ORCID:0000000332337161); Mukherjee, Kunal (ORCID:000000022796856X)<p>We investigate the amorphous-to-crystalline transformation of antimony selenide (Sb2Se3) on UHV-prepared GaAs (001) substrates. In the bulk orthorhombic form, Sb2Se3 is a layered quasi-1D semiconductor with highly anisotropic properties of interest for optical and electronic devices. We find that an amorphous layer deposited by molecular beam epitaxy annealed at or above 230 °C yields a textured-epitaxial structure among some randomly oriented domains. The textured-epitaxial Sb2Se3 grains are oriented with the covalently bonded “1D axis” constrained in-plane to GaAs [110] and with multiple van der Waals (hk0) orientations out-of-plane. The same texture was achieved exclusively without randomly oriented grains using continuous-wave laser radiation, highlighting the use of thermal and optical methods to yield anisotropic crystalline Sb2Se3 films directly from the amorphous phase. Polarized reflectance and polarized microscopy confirm the unique state of in-plane birefringence in the crystallized thin film. Overall, we show that solid-phase heteroepitaxy provides additional pathways to the integration of low-symmetry chalcogenide semiconductors for demanding applications where the inherent anisotropy needs to be preserved.</p>AVS2026-03-0110672305Journal of Vacuum Science & Technology A4420734-2101https://doi.org/10.1116/6.00050972036520National Science Foundation