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The spectral and transport properties of strongly correlated metals, such as SrVO3 (SVO), are widely attributed to electron-electron (𝑒−𝑒) interactions, with lattice vibrations (phonons) playing a secondary role. Here, using first-principles electron-phonon (𝑒-ph) and dynamical mean field theory calculations, we show that 𝑒-ph interactions play an essential role in SVO: they govern the electron scattering and resistivity in a wide temperature range down to 30 K, and induce an experimentally observed kink in the spectral function. In contrast, the 𝑒−𝑒 interactions control quasiparticle renormalization and low temperature transport, and enhance the 𝑒-ph coupling. We clarify the origin of the near 𝑇2 temperature dependence of the resistivity by analyzing the 𝑒−𝑒 and 𝑒-ph limited transport regimes. Our work disentangles the electronic and lattice degrees of freedom in a prototypical correlated metal, revealing the dominant role of 𝑒-ph interactions in SVO. 

Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO₃/La:SrSnO₃/GdScO₃(110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO₃from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO₃. This led to a modulation of carrier density from 10¹⁸to 10²⁰cm⁻³, with room temperature mobilities ranging from 40 to 140 cm²V⁻¹s⁻¹. The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime.