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Neuromorphic computing is a promising candidate for beyond-von Neumann computer architectures, featuring low power consumption and high parallelism. Lateral inhibition and winner-take-all (WTA) features play a crucial role in neuronal competition of the nervous system as well as neuromorphic hardwares. The domain wall - magnetic tunnel junction (DWMTJ) neuron is an emerging spintronic artificial neuron device exhibiting intrinsic lateral inhibition. In this paper we show that lateral inhibition parameters modulate the neuron firing statistics in a DW-MTJ neuron array, thus emulating soft-winner-take-all (WTA) and firing group selection.

Neuromorphic computing captures the quintessential neural behaviors of the brain and is a promising candidate for the beyond-von Neumann computer architectures, featuring low power consumption and high parallelism. The neuronal lateral inhibition feature, closely associated with the biological receptive eld, is crucial to neuronal competition in the nervous system as well as its neuromorphic hardware counterpart. The domain wall - magnetic tunnel junction (DW-MTJ) neuron is an emerging spintronic arti cial neuron device exhibiting intrinsic lateral inhibition. This work discusses lateral inhibition mechanism of the DW-MTJ neuron and shows by micromagnetic simulation that lateral inhibition is eciently enhanced by the Dzyaloshinskii-Moriya interaction (DMI).

Spintronic devices, especially those based on motion of a domain wall (DW) through a ferromagnetic track, have received a significant amount of interest in the field of neuromorphic computing because of their non-volatility and intrinsic current integration capabilities. Many spintronic neurons using this technology have already been proposed, but they also require external circuitry or additional device layers to implement other important neuronal behaviors. Therefore, they result in an increase in fabrication complexity and/or energy consumption. In this work, we discuss three neurons that implement these functions without the use of additional circuitry or material layers.

The challenge of developing an efficient artificial neuron is impeded by the use of external CMOS circuits to perform leaking and lateral inhibition. The proposed leaky integrate-and-fire neuron based on the three terminal magnetic tunnel junction (3T-MTJ) performs integration by pushing its domain wall (DW) with spin-transfer or spin-orbit torque. The leaking capability is achieved by pushing the neurons’ DWs in the direction opposite of integration using a stray field from a hard ferromagnet or a non-uniform energy landscape resulting from shape or anisotropy variation. Firing is performed by the MTJ stack. Finally, analog lateral inhibition is achieved by dipolar field repulsive coupling from each neuron. An integrating neuron thus pushes slower neighboring neurons’ DWs in the direction opposite of integration. Applying this lateral inhibition to a ten-neuron output layer within a neuromorphic crossbar structure enables the identification of handwritten digits with 94% accuracy.