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A circular polarized (CP) pentaband antenna based on the aperture-in-aperture (AIA) concept is presented for CubeSat applications. This AIA consists of five different bands ranging from L-band to Ka-band. Four different antennas, each operating at a specific frequency band, namely 12 GHz, 18.5 GHz, 26 GHz, and 32 GHz, were incorporated into an L-band (viz. 1.5 GHz) antenna. Notably, the five antennas can operate simultaneously for a CubeSat downlink operation with a frequency ratio of 21.3:1. The antenna structure shows a realized gain of 5–10 dBi with good CP bandwidth (< 3 dB) across the overall operational frequency range. That is, the realized gain of L-band (1.5 GHz), X-band (12.5 GHz), K-band1 (18.5 GHz), K-band2 (26 GHz), and Ka-bands (32 GHz) are 5.05 dBi, 8.21 dBi, 7.33 dBi, 7.97 dBi, and 8.56 dBi. A high impedance surface (HIS) is incorporated with the Ka-band antenna to mitigate the ripples in the radiation pattern created by the interference of surface waves. A prototype was fabricated and tested. The measurement data agrees well with the simulation. 

This paper presents a single-fed, single-layer, dual-band antenna with a large frequency ratio of 4.74:1 for vehicle-to-vehicle communication. The antenna consists of a 28 GHz inset-fed rectangular patch embedded into a 5.9 GHz patch antenna for dual-band operation. The designed dual-band antenna operates from 5.81 to 5.99 GHz (Dedicated Short Range Communications, DSRC) and 27.9 to 30.1 GHz (5G millimeter-wave (mm-wave) band). Furthermore, the upper band patch was modified by inserting slots near the inset feed line to achieve an instantaneous bandwidth of 4.5 GHz. The antenna was fabricated and measured. The manufactured prototype operates simultaneously from 5.8 to 6.05 GHz and from 26.8 to 31.3 GHz. Notably, the designed dual-band antenna offers a high peak gain of 7.7 dBi in the DSRC band and 6.38 dBi in the 5G mm-wave band. 

This paper presents a novel low loss 3D system in package (SiP) approach for achieving antenna-on-chip integration. Specifically, this design uses 3D through silicon via (TSV) technology to achieve a vertical SiP phased array radio. The fully integrated package consists of a digital baseband chip, a radio frequency integrated circuit (RFIC), and lastly a microstrip patch phased array. The 3D TSVs achieve an insertion loss of less than 0.4 dB/pair at millimeter-wave frequencies. The differential fed microstrip patch array achieves a return loss of 40 dB at a 60 GHz center frequency with 4 GHz instantaneous bandwidth. The antenna array achieves an E and H plane realized gain of 17.1 dBi for a 4×4 element design. In addition, this design approach enables individual fabrication of each element to maximize yield with low cost assembly using ball grid array (BGA) technology. Lastly, this design does not require special design rules that comprise either transistor or antenna performance as compared to other methods outlined in antenna on chip design.