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The anisotropic dielectric functions (DF) of corundum structuredm-planeα-(Al_xGa_1−x)₂O₃thin films (up tox= 0.76) grown onm-plane sapphire substrate by metalorganic CVD have been investigated. IR and visible–UV spectroscopic ellipsometry yields the DFs, while X-ray diffraction revealed the lattice parameters (a,m,c), showing the samples are almost fully relaxed. Analysis of the IR DFs from 250 to 6000 cm⁻¹by a complex Lorentz oscillator model yields the anisotropic IR active phononsE_uandA_2uand the shift towards higher wavenumbers with increasing Al content. Analyzing the UV DFs from 0.5 to 6.6 eV we find the change in the dielectric limitsε_∞and the shift of the Γ-point transition energies with increasing Al content. This results in anisotropic bowing parameters forα-(Al_xGa_1−x)₂O₃ofb_⊥= 2.1 eV andb_∣∣= 1.7 eV.

High crystalline quality thick β-Ga₂O₃drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial β-Ga₂O₃thin films grown on Sn-doped (010) and (001) β-Ga₂O₃substrates by LPCVD with a fast growth rate varying from 13 to 21  μm/h. A higher temperature growth results in the highest reported growth rate to date. Room temperature current density–voltage data for different Schottky diodes are presented, and diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage are studied. Temperature dependence (25–250 °C) of the ideality factor, barrier height, and specific on-resistance is also analyzed from the J–V–T characteristics of the fabricated Schottky diodes.