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  1. Metasurfaces have recently risen to prominence in optical research, providing unique functionalities that can be used for imaging, beam forming, holography, polarimetry, and many more, while keeping device dimensions small. Despite the fact that a vast range of basic metasurface designs has already been thoroughly studied in the literature, the number of metasurfacerelated papers is still growing at a rapid pace, as metasurface research is now spreading to adjacent fields, including computational imaging, augmented and virtual reality, automotive, display, biosensing, nonlinear, quantum and topological optics, optical computing, and more. At the same time, the ability of metasurfaces to perform optical functions in much more compact optical systems has triggered strong and constantly growing interest from various industries that greatly benefit from the availability of miniaturized, highly functional, and efficient optical components that can be integrated in optoelectronic systems at low cost. This creates a truly unique opportunity for the field of metasurfaces to make both a scientific and an industrial impact. The goal of this Roadmap is to mark this “golden age” of metasurface research and define future directions to encourage scientists and engineers to drive research and development in the field of metasurfaces toward both scientific excellence and broad industrial adoption. 
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  3. Abstract

    Monolayer ternary tellurides based on alloying different transition metal dichalcogenides (TMDs) can result in new two‐dimensional (2D) materials ranging from semiconductors to metals and superconductors with tunable optical and electrical properties. Semiconducting WTe2xS2(1‐x)monolayer possesses two inequivalent valleys in the Brillouin zone, each valley coupling selectively with circularly polarized light (CPL). The degree of valley polarization (DVP) under the excitation of CPL represents the purity of valley polarized photoluminescence (PL), a critical parameter for opto‐valleytronic applications. Here, new strategies to efficiently tailor the valley‐polarized PL from semiconducting monolayer WTe2xS2(1‐x)at room temperature (RT) through alloying and back‐gating are presented. The DVP at RT is found to increase drastically from < 5% in WS2to 40% in WTe0.12S1.88by Te‐alloying to enhance the spin‐orbit coupling. Further enhancement and control of the DVP from 40% up to 75% is demonstrated by electrostatically doping the monolayer WTe0.12S1.88via metallic 1T′‐WTe2electrodes, where the use of 1T′‐WTe2substantially lowers the Schottky barrier height (SBH) and weakens the Fermi‐level pinning of the electrical contacts. The demonstration of drastically enhanced DVP and electrical tunability in the valley‐polarized emission from 1T′‐WTe2/WTe0.12S1.88heterostructures paves new pathways towards harnessing valley excitons in ultrathin valleytronic devices for RT applications.

     
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    Inorganic phototropic growth using only spatially conformal illumination generated Se–Cd films that exhibited precise light-defined mesoscale morphologies including highly ordered, anisotropic, and periodic ridge and trench nanotextures over entire macroscopic substrates. Growth was accomplished via a light-induced electrochemical method using an optically and chemically isotropic solution, an unpatterned substrate, and unstructured, incoherent, low-intensity illumination in the absence of chemical directing agents or physical templates and masks. The morphologies were defined by the illumination inputs: the nanotexture long axes aligned parallel to the optical E-field vector, and the feature sizes and periods scaled with the wavelength. Optically based modeling of the growth closely reproduced the experimental results, confirming the film morphologies were fully determined by the light–matter interactions during growth. Solution processing of the Se–Cd films resulted in stoichiometric, crystalline CdSe films that also exhibited ordered nanotextures, demonstrating that inorganic phototropic growth can effect tunable, template-free generation of ordered CdSe nanostructures over macroscopic length scales. 
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