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Abstract A free‐standing β‐Ga₂O₃, also called β‐Ga₂O₃nanomembrane (NM), is an important next‐generation wide bandgap semiconductor that can be used for myriad high‐performance future flexible electronics. However, details of structure‐property relationships of β‐Ga₂O₃NM under strain conditions have not yet investigated. In this paper, the electrical properties of β‐Ga₂O₃NM under different uniaxial strain conditions using various surface analysis methods are systematically investigated and layer‐delamination and fractures are revealed. The electrical characterization shows that the presence of nanometer‐sized gaps between fractured pieces in β‐Ga₂O₃NM causes a severe property degradation due to higher resistance and uneven charge distribution in β‐Ga₂O₃NM which is also confirmed by the multiphysics simulation. Interestingly, the degraded performance in β‐Ga₂O₃NM is substantially recovered by introducing excessive OH‐bonds in fractured β‐Ga₂O₃NM via the water vapor treatment. The X‐ray photoelectron spectroscopy study reveals that a formation of OH‐bonds by the water vapor treatment chemically connects nano‐gaps. Thus, the treated β‐Ga₂O₃samples exhibit reliable and stable recovered electrical properties up to ≈90% of their initial values. Therefore, this result offers a viable route for utilizing β‐Ga₂O₃NMs as a next‐generation material for a myriad of high‐performance flexible electronics and optoelectronic applications.