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Creators/Authors contains: "Bayram, C."

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  1. GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.
  2. We report a method of synthesizing pure cubic phase GaN integrated on Si(100) platform using the novel aspect ratio nano-patterning. We demonstrated through modelling and experiment data that complete cubic phase GaN epilayer coverage can be achieved when critical silicon patterning parameters are met. The purity and quality of the resulting cubic phase GaN are verified using temperature dependent cathodoluminescence, atomic force microscopy and electron backscatter diffraction. Acceptor energies, Varshni coefficient, surface roughness, spectral and spatial quality are reported.