skip to main content

Search for: All records

Creators/Authors contains: "Bidthanapally, Rao"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Abstract

    The nature of nonlinear magnetoelectric (NLME) effect has been investigated at room-temperature in a single-crystal Zn substituted nickel ferrite. Tuning of the frequency of magnetostatic surface wave (MSSW) modes under an applied pulsed DC electric field/current has been utilized to probe the effect. The frequencies of the modes at 8–20 GHz were found to decrease by ~ 400 MHz for an applied DC powerPof ~ 100 mW and the frequency shift was the same for all of the MSSW modes and linearly proportional toP. A model is proposed for the effect and the NLME phenomenon was interpreted in terms of a reduction in the saturation magnetization due to the DC current. The decrease of magnetization with applied electric power, estimated from data on mode frequency versusP, was − 2.50 G/mW. The frequency tuning efficiency of the MSSW modes due to NLME effects in the ferrite resonator was found to be 4.1 MHz/mW which is an order of magnitude higher than the shift reported for M-type strontium and barium hexaferrite resonators investigated earlier. The spinel ferrite resonator discussed here has the potential for miniature, electric field tunable, planar microwave devices for the 8–20 GHz frequency range.

    more » « less
  2. Abstract

    This work is on the design, fabrication and characterization of a hexagonal ferrite band-pass filter that can be tuned either with a magnetic field or an electric field. The filter operation is based on a straight-edge Y-type hexagonal ferrite resonator symmetrically coupled to the input and output microstrip transmission lines. The Zn2Yfilter demonstrated magnetic field tunability in the 8–12 GHz frequency range by applying an in-plane bias magnetic fieldH0provided by a built-in permanent magnet. The insertion loss and 3 dB bandwidth within this band were 8.6 ± 0.4 dB and 350 ± 40 MHz, respectively. The electric fieldEtunability of the pass-band of the device was facilitated by the nonlinear magnetoelectric effect (NLME) in the ferrite. TheE-tuning of the center frequency of the filter by (1150 ± 90) MHz was obtained for an input DC electric power of 200 mW. With efforts directed at a significant reduction in the insertion loss, the compact and power efficient magnetic and electric field tunable Zn2Y band-pass filter has the potential for use in novel reconfigurable RF/microwave devices and communication systems.

    more » « less
  3. Abstract This work focuses on the nature of magnetic anisotropy in 2.5–16 micron thick films of nickel ferrite (NFO) grown by liquid phase epitaxy (LPE). The technique, ideal for rapid growth of epitaxial oxide films, was utilized for films on (100) and (110) substrates of magnesium gallate (MGO). The motivation was to investigate the dependence of the growth induced anisotropy field on film thickness since submicron films of NFO were reported to show a very high anisotropy. The films grown at 850–875 C and subsequently annealed at 1000 C were found to be epitaxial, with the out-of-plane lattice constant showing unanticipated decrease with increasing film thickness and the estimated in-plane lattice constant increasing with the film thickness. The uniaxial anisotropy field H σ , estimated from X-ray diffraction data, ranged from 2.8–7.7 kOe with the films on (100) MGO having a higher H σ value than for the films on (110) MGO. Ferromagnetic resonance (FMR) measurements for in-plane and out-of-plane static magnetic field were utilized to determine both the magnetocrystalline the anisotropy field H 4 and the uniaxial anisotropy field H a . Values of H 4 range from −0.24 to −0.86 kOe. The uniaxial anisotropy field H a was an order of magnitude smaller than H σ and it decreased with increasing film thickness for NFO films on (100) MGO, but H a increased with film thickness for films on (110) MGO substrates. These observations indicate that the origin of the induced anisotropy could be attributed to several factors including (i) strain due to mismatch in the film-substrate lattice constants, (ii) possible variations in the bond lengths and bond angles in NFO during the growth process, and (iii) the strain arising from mismatch in the thermal expansion coefficients of the film and the substrate due to the high growth and annealing temperatures involved in the LPE technique. The LPE films of NFO on MGO substrates studied in this work are of interest for use in high frequency devices. 
    more » « less
  4. This report is on the nature of strain in thin films of yttrium iron garnet (YIG) on yttrium aluminum garnet (YAG) substrates due to film-substrate lattice mismatch and the resulting induced magnetic anisotropy. Films with thickness 55 nm to 380 nm were deposited on (100), (110), and (111) YAG substrates using pulsed laser deposition (PLD) techniques and characterized by structural and magnetic characterization techniques. The in-plane strain determined to be compressive using X-ray diffraction (XRD). It varied from −0.12% to −0.98% and increased in magnitude with increasing film thickness and was relatively large in films on (100) YAG. The out-of-plane strain was tensile and also increased with increasing film thickness. The estimated strain-induced magnetic anisotropy field, found from XRD data, was out of plane; its value increased with film thickness and ranged from 0.47 kOe to 3.96 kOe. Ferromagnetic resonance (FMR) measurements at 5 to 21 GHz also revealed the presence of a perpendicular magnetic anisotropy that decreased with increasing film thickness and its values were smaller than values obtained from XRD data. The PLD YIG films on YAG substrates exhibiting a perpendicular anisotropy field have the potential for use in self-biased sensors and high-frequency devices. 
    more » « less
  5. null (Ed.)
  6. null (Ed.)