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The dynamics of triplet and singlet exciton populations in organic semiconductors offer interesting possibilities in improving optical device efficiency, while also attracting interest for future applications as manipulable states for quantum-state based computing. For technological applications, transduction of the exciton state is essential, thus detailed information on how the exciton dynamics affect device outputs is required. In this study, we measure the magnetic field response of the photocurrent in organic transistors to investigate the electrical signal resulting from singlet–triplet exciton dynamics. We find that controlling the orientation of the magnetic dipole orientation of the triplet by varying both the magnitude and orientation of the magnetic field with respect to single crystal axes in anti -2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene ( a diF TES ADT) allows us to manipulate the amount of current detected as a result of singlet fission.more » « less
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The charge-transfer (CT) state arising as a hybrid electronic state at the interface between charge donor and charge acceptor molecular units is important to a wide variety of physical processes in organic semiconductor devices. The exact nature of this state depends heavily on the nature and co-facial overlap between the donor and acceptor; however, altering this overlap is usually accompanied by extensive confounding variations in properties due to extrinsic factors, such as microstructure. As a consequence, establishing reliable relationships between donor/acceptor molecular structures, their molecular overlap, degree of charge transfer and physical properties, is challenging. Herein, we examine the electronic structure of a polymorphic system based on the donor dibenzotetrathiafulvalene (DBTTF) and the acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) in the form of high-quality single crystals varying in the donor–acceptor overlap. Using angle-resolved photoemission spectroscopy, we resolve the highest occupied molecular orbital states of the CT crystals. Analysis based on field-effect transistors allows us to probe the sub-gap states impacting hole and electron transport. Our results expand the understanding on the impact of donor and acceptor interactions on electronic structure and charge transport.more » « less
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Abstract Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto‐)electronic applications. One example is the organic field‐effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.