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This study systematically investigates the magnetic properties of the layered ferromagnet MnPt5As under pressure through a combination of experimental measurements and theoretical simulations. MnPt5As exhibits a ferromagnetic transition at approximately 301 K. Neutron diffraction measurements under applied pressures up to ∼4.9 GPa were performed over a temperature range from 320 to 100 K to probe its magnetic behavior. The results confirm that the Mn atoms maintain a ferromagnetic order under applied pressures, consistent with the ambient-pressure findings. However, magnetic anisotropy is notably suppressed. To further elucidate the compressibility of magnetic anisotropy in MnPt5As, x-ray diffraction under pressure was conducted. The results reveal that the c-axis undergoes a greater and more rapid compression compared to the ab-plane, which may contribute to the observed suppression of Mn ferromagnetic ordering along the c-axis. Additionally, theoretical calculations indicate that magnetic ordering exhibits a similar pressure-induced trend under applied pressure, supporting the experimental observations. These findings offer insights into the pressure-dependent magnetic properties and anisotropy of MnPt5As, with potential implications for strain engineering in Mn-based magnetic devices. 

ABSTRACT Electronic states under pressure exhibit unconventional spin and charge dynamics that provide a powerful route to uncover exotic phases in quantum materials. Here, we present the structural, magnetic, and electronic evolution of YbMn₂Sb₂under pressure. Single‐crystal X‐ray diffraction reveals a pressure‐induced structural transition from the space group trigonalPm1 to the monoclinicP2₁/mphase near 3.5 GPa, which remains stable up to 10 GPa. Magnetization measurements display an anomalously weak net magnetic moment and the absence of Curie–Weiss behavior up to 400 K, suggesting the formation of short‐range Mn moment pairs that cancel macroscopically and subsequently evolve into long‐range order upon cooling. Temperature‐dependent resistivity shows semiconducting behavior with a transition at ∼119 K at ambient pressure, while pressure induces a dramatic suppression of resistance and the emergence of metallic‐like temperature dependence, stabilized beyond 5 GPa. This pressure‐driven semiconductor‐metal transition is consistent with our density functional theory calculations, confirming the closing of the band gap under compression. Neutron diffraction under pressure identifies an incommensurate magnetic structure with antiparallel correlations between paired spins. Together, these results demonstrate how pressure‐driven structural tuning and competing exchange interactions stabilize unconventional magnetic states in this low‐dimensional magnetic semiconductor. 

Abstract Since the initial discovery of 2D van der Waals (vdW) materials, significant effort has been made to incorporate the three properties of magnetism, band structure topology, and strong electron correlations—to leverage emergent quantum phenomena and expand their potential applications. However, the discovery of a single vdW material that intrinsically hosts all three ingredients has remained an outstanding challenge. Here, the discovery of a Kondo‐interacting topological antiferromagnet is reported in the vdW 5felectron system UOTe. It has a high antiferromagnetic (AFM) transition temperature of 150 K, with a unique AFM configuration that breaks the combined parity and time reversal (PT) symmetry in an even number of layers while maintaining zero net magnetic moment. This angle‐resolved photoemission spectroscopy (ARPES) measurements reveal Dirac bands near the Fermi level, which combined with the theoretical calculations demonstrate UOTe as an AFM Dirac semimetal. Within the AFM order, the presence of the Kondo interaction is observed, as evidenced by the emergence of a 5fflat band near the Fermi level below 100 K and hybridization between the Kondo band and the Dirac band. The density functional theory calculations in its bilayer form predict UOTe as a rare example of a fully‐compensated AFM Chern insulator.