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Integrated photonic microresonators have become an essential resource for generating photonic qubits for quantum information processing, entanglement distribution and networking, and quantum communications. The pair-generation rate is enhanced by reducing the microresonator radius, but this comes at the cost of increasing the frequency-mode spacing and reducing the quantum information spectral density. Here, we circumvent this rate-density trade-off in an $\mathrm{Al}\mathrm{Ga}\mathrm{As}$-on-insulator photonic device by multiplexing an array of 20 small-radius microresonators, each producing a 650-GHz-spaced comb of time-energy entangled-photon pairs. The resonators can be independently tuned via integrated thermo-optic heaters, enabling control of the mode spacing from degeneracy up to a full free spectral range. We demonstrate simultaneous pumping of five resonators with up to $50$-GHz relative comb offsets, where each resonator produces pairs exhibiting time-energy entanglement visibilities up to $95\mathrm{\%}$, coincidence-to-accidental ratios exceeding $5000$, and an on-chip pair rate up to $2.6{\mathrm{G}\mathrm{Hz}/\mathrm{mW}}^2$per comb line—an improvement over prior work by more than a factor of 40. As a demonstration, we generate frequency-bin qubits in a maximally entangled two-qubit Bell state with fidelity exceeding $87\mathrm{\%}$( $90\mathrm{\%}$with background correction) and detected frequency-bin entanglement rates up to 7 kHz (an approximately $70$MHz on-chip pair rate) using a pump power of approximately $250\text{μ}\mathrm{W}$. Multiplexing small-radius microresonators combines the key capabilities required for programmable and dense photonic qubit encoding while retaining high pair-generation rates, heralded single-photon purity, and entanglement fidelity. Published by the American Physical Society2025 

The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas, such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a nonlinear platform—InGaP-on-insulator—optimized for visible-to-telecommunication wavelength χ(2) nonlinear optical processes. In this work, we detail our 100 mm wafer-scale InGaP-on-insulator fabrication process realized via wafer bonding, optical lithography, and dry-etching techniques. The resulting wafers yield 1000 s of components in each fabrication cycle, with initial designs that include chip-to-fiber couplers, 12.5-cm-long nested spiral waveguides, and arrays of microring resonators with free-spectral ranges spanning 400–900 GHz. We demonstrate intrinsic resonator quality factors as high as 324 000 (440 000) for single-resonance (split-resonance) modes near 1550 nm corresponding to 1.56 dB/cm (1.22 dB/cm) propagation loss. We analyze the loss vs waveguide width and resonator radius to establish the operating regime for optimal 775–1550 nm phase matching. By combining the high χ(2) and χ(3) optical nonlinearity of InGaP with wafer-scale fabrication and low propagation loss, these results open promising possibilities for entangled-photon, multi-photon, and squeezed light generation. 

A heterogeneously integrated InGaN laser diode (LD) on Si is proposed as a path toward visible wavelength photonic integrated circuits (PICs) on Si. Herein, InGaN films are vertically stacked on a TiO₂waveguide (WG) fabricated on a Si wafer by bonding. In the light propagation direction, it is composed of a hybrid InGaN/TiO₂section, a TiO₂WG, an adiabatic taper, and mirrors that can form a cavity. As the refractive index of GaN is well matched with that of TiO₂, the optical transverse mode extends to both the GaN and TiO₂in a hybrid mode. Modes between a hybrid InGaN/TiO₂and a pure TiO₂WG can transfer with an adiabatic taper structure. The coupling loss is calculated to be less than 0.5 dB with fairly short taper length of 78 μm and tip width of 200 nm. GaN substrate removal and bonding are critical fabrication steps of this LD and PIC. The substrate removal is successfully done by photoelectrochemical etching. Although direct bonding of GaN wafers with thermal oxide on Si is successful, GaN epitaxial wafers are more difficult. An implication and remedy of this is discussed in terms of surface roughness of GaN epitaxial film.