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  1. While the properties of β-Ga2O3continue to be extensively studied for high-power applications, the effects of strong electric fields on the Ga2O3microstructure and, in particular, the impact of electrically active native point defects have been relatively unexplored. We used cathodoluminescence point spectra and hyperspectral imaging to explore possible nanoscale movements of electrically charged defects in Ga2O3vertical trench power diodes and observed the spatial rearrangement of optically active defects under strong reverse bias. These observations suggest an unequal migration of donor-related defects in β-Ga2O3due to the applied electric field. The atomic rearrangement and possible local doping changes under extreme electric fields in β-Ga2O3demonstrate the potential impact of nanoscale device geometry in other high-power semiconductor devices.

    Free, publicly-accessible full text available January 17, 2024
  2. A predicted type-II staggered band alignment with an approximately 1.4 eV valence band offset at the ZnGeN2/GaN heterointerface has inspired novel band-engineered III-N/ZnGeN2 heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown (ZnGe)1−xGa2xN2, for x = 0 and 0.06, and GaN using x-ray photoemission spectroscopy. The valence band of ZnGeN2 was found to lie 1.45–1.65 eV above that of GaN. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For (ZnGe)0.94Ga0.12N2 the value was determined to be 1.29 eV, ∼10%–20% lower than that of ZnGeN2. The experimental determination of the large band offset between ZnGeN2 and GaN provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.