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Abstract The opto-electronic oscillators (OEOs) hosting self-sustained oscillations by a time-delayed mechanism are of particular interest in long-haul signal transmission and processing. On the other hand, owing to their unique tunability and compatibility, magnons—as elementary excitations of spin waves—are advantageous carriers for coherent signal transduction across different platforms. In this work, we integrated an opto-electronic oscillator with a magnonic oscillator consisting of a microwave waveguide and a yttrium iron garnet sphere. We find that, in the presence of the magnetic sphere, the oscillator power spectrum exhibits sidebands flanking the fundamental OEO modes. The measured waveguide transmission reveals anti-crossing gaps, a hallmark of the coupling between the opto-electronic oscillator modes and the Walker modes of the sphere. Experimental results are well reproduced by a coupled-mode theory that accounts for nonlinear magnetostrictive interactions mediated by the magnetic sphere. Leveraging the advanced fiber-optic technologies in opto-electronics, this work lays out a new, hybrid platform for investigating long-distance coupling and nonlinearity in coherent magnonic phenomena. 

Transition metal dichalcogenides (TMDCs) have garnered considerable interest over the past decade as a class of semiconducting layered materials. Most studies on the carrier dynamics in these materials have focused on the monolayer due to its direct bandgap, strong photoluminescence, and strongly bound excitons. However, a comparative understanding of the carrier dynamics in multilayer (e.g., >10 layers) flakes is still absent. Recent computational studies have suggested that excitons in bulk TMDCs are confined to individual layers, leading to room-temperature stable exciton populations. Using this new context, we explore the carrier dynamics in MoSe2 flakes that are between ∼16 and ∼125 layers thick. We assign the kinetics to exciton–exciton annihilation (EEA) and Shockley–Read–Hall recombination of free carriers. Interestingly, the average observed EEA rate constant (0.003 cm2/s) is nearly independent of flake thickness and 2 orders of magnitude smaller than that of an unencapsulated monolayer (0.33 cm2/s) but very similar to values observed in encapsulated monolayers. Thus, we posit that strong intralayer interactions minimize the effect of layer thickness on recombination dynamics, causing the multilayer to behave like the monolayer and exhibit an apparent EEA rate intrinsic to MoSe2. 

Abstract We report a precious‐metal‐free molecular catalyst‐based photocathode that is active for aqueous CO 2 reduction to CO and methanol. The photoelectrode is composed of cobalt phthalocyanine molecules anchored on graphene oxide which is integrated via a (3‐aminopropyl)triethoxysilane linker to p‐type silicon protected by a thin film of titanium dioxide. The photocathode reduces CO 2 to CO with high selectivity at potentials as mild as 0 V versus the reversible hydrogen electrode (vs RHE). Methanol production is observed at an onset potential of −0.36 V vs RHE, and reaches a peak turnover frequency of 0.18 s −1 . To date, this is the only molecular catalyst‐based photoelectrode that is active for the six‐electron reduction of CO 2 to methanol. This work puts forth a strategy for interfacing molecular catalysts to p‐type semiconductors and demonstrates state‐of‐the‐art performance for photoelectrochemical CO 2 reduction to CO and methanol. 

Abstract In this work, bottom‐up Al–Si–Al nanowire (NW) heterostructures are presented, which act as a prototype vehicle toward top‐down fabricated nanosheet (NS) and multi‐wire (MW) reconfigurable field‐effect transistors (RFETs). Evaluating the key parameters of these transistors regarding the on‐ and off‐currents as well as threshold voltages for n‐ and p‐type operation exhibit a high degree of symmetry. Most notably also a low device‐to‐device variability is achieved. In this respect, the investigated Al–Si material system reveals its relevance for reconfigurable logic cells obtained from Si NSs. To show the versatility of the proposed devices, this work reports on a combinational wired‐AND gate obtained from a multi‐gate RFET. Additionally, up‐scaling the current is achieved by realizing a MW RFET without compromising reconfigurability. The Al–Si–Al platform has substantial potential to enable complex adaptive and self‐learning combinational and sequential circuits with energy efficient and small footprint computing paradigms as well as for native components for hardware security circuits.