- Home
- Search Results
- Page 1 of 1
Search for: All records
-
Total Resources3
- Resource Type
-
0000000003000000
- More
- Availability
-
30
- Author / Contributor
- Filter by Author / Creator
-
-
Calderon, Sebastian (3)
-
Dickey, Elizabeth C (3)
-
Akkopru-Akgun, Betul (1)
-
Alfonso, Dominic (1)
-
Auker, Wesley (1)
-
Engel-Herbert, Roman (1)
-
Fazlioglu-Yalcin, Benazir (1)
-
Gianopoulos, Christopher G (1)
-
Gopalan, Venkatraman (1)
-
Gorai, Prashun (1)
-
Hilse, Maria (1)
-
Jacques, Leonard (1)
-
Ji, Weijie (1)
-
Jin, Rongchao (1)
-
Kirschbaum, Kristin (1)
-
Law, Stephanie (1)
-
Li, Mo (1)
-
Liu, Derrick_Shao Heng (1)
-
Liu, Ying (1)
-
Liu, Zhongyu (1)
-
- Filter by Editor
-
-
& Spizer, S. M. (0)
-
& . Spizer, S. (0)
-
& Ahn, J. (0)
-
& Bateiha, S. (0)
-
& Bosch, N. (0)
-
& Brennan K. (0)
-
& Brennan, K. (0)
-
& Chen, B. (0)
-
& Chen, Bodong (0)
-
& Drown, S. (0)
-
& Ferretti, F. (0)
-
& Higgins, A. (0)
-
& J. Peters (0)
-
& Kali, Y. (0)
-
& Ruiz-Arias, P.M. (0)
-
& S. Spitzer (0)
-
& Sahin. I. (0)
-
& Spitzer, S. (0)
-
& Spitzer, S.M. (0)
-
&, John Wiley (0)
-
-
Have feedback or suggestions for a way to improve these results?
!
Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
Abstract Ferroelectricity was long considered incompatible with the wurtzite structure, but the recent discovery of switchable polarization in wurtzite alloys has renewed interest in these materials for integrated electronic and memory applications. The development of wurtzite ferroelectrics faces significant technological challenges, which can be addressed through a fundamental physical understanding of their dielectric and ferroelectric properties. This article focuses on the physics that govern the polarization switching behavior, emphasizing the atomic- and meso-scale (domain) mechanisms involved in the transition between polarization states. A distinguishing feature of this article is a deep dive into the role of intrinsic and extrinsic defects—an area that has received limited attention in prior reviews, but is increasingly recognized as central to polarization switching, coercive fields, leakage, and fatigue. We highlight how defect behavior evolves during processing and electrical cycling, often contributing to long-term degradation. We also introduce powerful first-principles defect calculations, common in semiconductors but not yet widespread in ferroelectrics, as tools to understand and design materials. By integrating recent theoretical and experimental insights, we aim to provide a framework for advancing wurtzite ferroelectrics. Graphical abstractmore » « less
-
Liu, Zhongyu; Wang, Yitong; Ji, Weijie; Ma, Xiaowei; Gianopoulos, Christopher G; Calderon, Sebastian; Ma, Timothy; Luo, Lianshun; Mazumder, Abhrojyoti; Kirschbaum, Kristin; et al (, ACS Nano)
-
Liu, Derrick_Shao Heng; Calderon, Sebastian; Jacques, Leonard; Yao, Jinyuan; Suceava, Albert Christian; Fazlioglu-Yalcin, Benazir; Li, Mo; Young, Joshua; Auker, Wesley; Law, Stephanie; et al (, ACS Applied Materials & Interfaces)
An official website of the United States government
