skip to main content

Search for: All records

Creators/Authors contains: "Cui, Jingbiao"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Realizing stimulated emission from defects in 2D layered semiconductors has the potential to enhance the sensitivity of characterizing their defects. However, stimulated emission from defects in layered materials presents a different set of challenges in carrier lifetime and energy level design and has not been achieved so far. Here, we combine photoluminescence (PL) spectroscopy, Raman spectroscopy, and first-principles theory to reveal an anomalous PL intensity-temperature relation and strong polarization effects at a defect emission peak in annealed multilayer MoS2, suggesting defect-based stimulated emission. The emergence of stimulated emission behavior is also controllable (by temperature) and reversible. The observed stimulated emission behavior is supported by a three-level system involving two defect levels from chalcogen vacancies and a pump level from the conduction band edge. First-principles calculations show that the special indirect gap that enables stimulated emission is not native to pristine bulk MoS2 and only emerges under thermal strain.
    Free, publicly-accessible full text available July 10, 2023
  2. The laser diffraction from periodic structures typically shows isolated and sharp point patterns at zeroth and ±nth orders. Diffraction from 2D graded photonic super-crystals (GPSCs) has demonstrated over 1000 spots due to the fractional diffractions. Here, we report the holographic fabrication of three types of 3D GPSCs through nine beam interferences and their characteristic diffraction patterns. The diffraction spots due to the fractional orders are merged into large-area diffraction zones for these three types of GPSCs. Three distinguishable diffraction patterns have been observed: (a) 3 × 3 Diffraction zones for GPSCs with a weak gradient in unit super-cell, (b) 5 × 5 non-uniform diffraction zones for GPSCs with a strong modulation in long period and a strong gradient in unit super-cell, (c) more than 5 × 5 uniform diffraction zones for GPSCs with a medium gradient in unit super-cell and a medium modulation in long period. The GPSCs with a strong modulation appear as moiré photonic crystals. The diffraction zone pattern not only demonstrates a characterization method for the fabricated 3D GPSCs, but also proves their unique optical properties of the coupling of light from zones with 360° azimuthal angles and broad zenith angles.
    Free, publicly-accessible full text available June 1, 2023
  3. Metal halide perovskites have emerged as the next generation of light emitting semiconducting materials due to their excellent properties such as tunable bandgaps, high photoluminescence quantum yield, and high color purity. Nickel oxide is a hole transport material that has been used in planar light emitting diodes (LEDs). In this paper, we develop a novel method for the large scale fabrication of metal halide perovskite nanowire arrays encapsulated inside nickel oxide nanotubes. We study the structural and spectral properties of these infiltrated perovskites nanowires and, to the best of our knowledge, for the first time report on a working LED device consisting of perovskites encapsulated inside nickel oxide nanotubes. Finally, we study the photoluminescence and electroluminescence of an LED with MAPbBr 3 inside nickel oxide nanotubes and obtain an outstanding current efficiency of 5.99 Cd A −1 and external quantum efficiency of 3.9% for the LED device.
    Free, publicly-accessible full text available May 5, 2023
  4. Abstract Silicon telluride (Si 2 Te 3 ) has emerged as one of the many contenders for 2D materials ideal for the fabrication of atomically thin devices. Despite the progress which has been made in the electric and optical properties of silicon telluride, much work is still needed to better understand this material. We report here on the Raman study of Si 2 Te 3 degradation under both annealing and in situ heating with a laser. Both processes caused pristine Si 2 Te 3 to degrade into tellurium and silicon oxide in air in the absence of a protective coating. A previously unreported Raman peak at ∼140 cm −1 was observed from the degraded samples and is found to be associated with pure tellurium. This peak was previously unresolved with the peak at 144 cm −1 for pristine Si 2 Te 3 in the literature and has been erroneously assigned as a signature Raman peak of pure Si 2 Te 3 , which has caused incorrect interpretations of experimental data. Our study has led to a fundamental understanding of the Raman peaks in Si 2 Te 3 , and helps resolve the inconsistent issues in the literature. This study ismore »not only important for fundamental understanding but also vital for material characterization and applications.« less
    Free, publicly-accessible full text available April 7, 2023
  5. Free, publicly-accessible full text available March 25, 2023
  6. The study of twisted bilayer 2D materials has revealed many interesting physics properties. A twisted moiré photonic crystal is an optical analog of twisted bilayer 2D materials. The optical properties in twisted photonic crystals have not yet been fully elucidated. In this paper, we generate 2D twisted moiré photonic crystals without physical rotation and simulate their photonic band gaps in photonic crystals formed at different twisted angles, different gradient levels, and different dielectric filling factors. At certain gradient levels, interface modes appear within the photonic band gap. The simulation reveals “tic tac toe”-like and “traffic circle”-like modes as well as ring resonance modes. These interesting discoveries in 2D twisted moiré photonic crystal may lead toward its application in integrated photonics.
  7. It is challenging to realize the complete broadband absorption of near-infrared in thin optical devices. In this paper, we studied high light absorption in two devices: a stack of Au-pattern/insulator/Au-film and a stack of Au-pattern/weakly-absorbing-material/Au-film where the Au-pattern was structured in graded photonic super-crystal. We observed multiple-band absorption, including one near 1500 nm, in a stack of Au-pattern/spacer/Au-film. The multiple-band absorption is due to the gap surface plasmon polariton when the spacer thickness is less than 30 nm. Broadband absorption appears in the near-infrared when the insulator spacer is replaced by a weakly absorbing material. E-field intensity was simulated and confirmed the formation of gap surface plasmon polaritons and their coupling with Fabry–Pérot resonance.
  8. Abstract We report a combined experimental and computational study of the optical properties of individual silicon telluride (Si 2 Te 3 ) nanoplates. The p-type semiconductor Si 2 Te 3 has a unique layered crystal structure with hexagonal closed-packed Te sublattices and Si–Si dimers occupying octahedral intercalation sites. The orientation of the silicon dimers leads to unique optical and electronic properties. Two-dimensional Si 2 Te 3 nanoplates with thicknesses of hundreds of nanometers and lateral sizes of tens of micrometers are synthesized by a chemical vapor deposition technique. At temperatures below 150 K, the Si 2 Te 3 nanoplates exhibit a direct band structure with a band gap energy of 2.394 eV at 7 K and an estimated free exciton binding energy of 150 meV. Polarized reflection measurements at different temperatures show anisotropy in the absorption coefficient due to an anisotropic orientation of the silicon dimers, which is in excellent agreement with theoretical calculations of the dielectric functions. Polarized Raman measurements of single Si 2 Te 3 nanoplates at different temperatures reveal various vibrational modes, which agree with density functional perturbation theory calculations. The unique structural and optical properties of nanostructured Si 2 Te 3 hold great potential applications in optoelectronics and chemical sensing.
  9. ABSTRACT Silicon telluride (Si2Te3) is a silicon-based 2D chalcogenide with potential applications in optoelectronics. It has a unique crystal structure where Si atoms form Si-Si dimers to occupy the “metal” sites. In this paper, we report an ab initio computational study of its optical dielectric properties using the GW approximation and the Bethe-Salpeter equation (BSE). Strong in-plane optical anisotropy is discovered. The imaginary part of the dielectric constant in the direction parallel to the Si-Si dimers is found to be much lower than that perpendicular to the dimers. The optical measurement of the absorption spectra of 2D Si2Te3 nanoplates shows modulation of the absorption coefficient under 90-degree rotation, confirming the computational results. We show the optical anisotropy originates from the particular compositions of the wavefunctions in the valence and conduction bands. Because it is associated with the Si dimer orientation, the in-plane optical anisotropy can potentially be dynamically controlled by electrical field and strain, which may be useful for new device design. In addition, BSE calculations reduce GW quasiparticle band gap by 0.3 eV in bulk and 0.6 eV in monolayer, indicating a large excitonic effect in Si2Te3. Furthermore, including electron-hole interaction in bulk calculations significantly reduces the imaginary partmore »of the dielectric constant in the out-of-plane direction, suggesting strong interlayer exciton effect in Si2Te3 multilayers.« less