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Abstract Surface structures on radio-frequency (RF) superconductors are crucially important in determining their interaction with the RF field. Here we investigate the surface compositions, structural profiles, and valence distributions of oxides, carbides, and impurities on niobium (Nb) and niobium–tin (Nb₃Sn)in situunder different processing conditions. We establish the underlying mechanisms of vacuum baking and nitrogen processing in Nb and demonstrate that carbide formation induced during high-temperature baking, regardless of gas environment, determines subsequent oxide formation upon air exposure or low-temperature baking, leading to modifications of the electron population profile. Our findings support the combined contribution of surface oxides and second-phase formation to the outcome of ultra-high vacuum baking (oxygen processing) and nitrogen processing. Also, we observe that vapor-diffused Nb₃Sn contains thick metastable oxides, while electrochemically synthesized Nb₃Sn only has a thin oxide layer. Our findings reveal fundamental mechanisms of baking and processing Nb and Nb₃Sn surface structures for high-performance superconducting RF and quantum applications. 

Amorphous magnetic alloys with large perpendicular magnetic anisotropy (PMA) have emerged as a suitable material choice for spintronic memory and high-frequency non-reciprocal devices on-chip. Unlike ferromagnets, ferrimagnets offer faster switching dynamics, lower net saturation magnetization, minimal stray field and a lower net angular momentum. Ferrimagnetic thin films of Gd x Co 1− x sputter deposited as heterostructures of Ta/Pt/Gd x Co 1− x (t)/Pt on Si/SiO 2 have bulk-like PMA for thicknesses of 5–12 nm and room-temperature magnetic compensation for x = 28–32%. Preferential oxygenation of GdCo has been found to increase the effective anisotropy energy density by an order of magnitude and produce near-ideal remanence ratios. X-ray photoelectron spectroscopy accurately quantifies the metal-oxidation ratio, which shows that an oxygen-rich and Co-deficient stoichiometry (Gd 21 Co 28 O 51 ) likely weakens the ferromagnetic exchange interaction between Co–Co and contributes additional antiferromagnetic exchange through superexchange-like interactions between Gd and Co via O, resulting in a stronger out-of-plane magnetization. Even greater PMA and giant-anisotropy field of 11 kOe are achieved in super-lattices of the Gd 21 Co 28 O 51 heterostructure. The combination of ferrimagnetic ordering in amorphous Gd x Co 1− x and its affordance of pathways for engineering large PMA will enable the design of integrated high-frequency devices beyond 30 GHz and ultrafast energy efficient memory devices with switching speeds down to tens of picoseconds.