skip to main content

Search for: All records

Creators/Authors contains: "Ding, Xiangdong"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Abstract

    An electrical‐biased or mechanical‐loaded scanning probe written on the ferroelectric surface can generate programmable domain nanopatterns for ultra‐scaled and reconfigurable nanoscale electronics. Fabricating ferroelectric domain patterns by direct‐writing as quickly as possible is highly desirable for high response rate devices. Using monolayerα‐In2Se3ferroelectric with ≈1.2 nm thickness and intrinsic out‐of‐plane polarization as an example, a writing‐speed dependent effect on ferroelectric domain switching is discovered. The results indicate that the threshold voltages and threshold forces for domain switching can be increased from −4.2 to −5 V and from 365 to 1216 nN, respectively, as the writing‐speed increases from 2.2 to 10.6 µm s−1. The writing‐speed dependent threshold voltages can be attributed to the nucleations of reoriented ferroelectric domains, in which sufficient time is needed for subsequent domain growth. The writing‐speed dependent threshold forces can be attributed to the flexoelectric effect. Furthermore, the electrical‐mechanical coupling can be employed to decrease the threshold force, achieving as low as ≈189±41 nN, a value smaller than those of perovskite ferroelectric films. Such findings reveal a critical issue of ferroelectric domain pattern engineering that should be carefully addressed for programmable direct‐writing electronics applications.

    Free, publicly-accessible full text available May 5, 2024