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The example of spin crossover molecule [Fe(Htrz)2(trz)](BF4) (where Htrz = 1H-1,2,4-triazole) plus polyaniline composite thin films is used to illustrate the rapid improvement in transport properties signaling that competitive molecular devices for back end of the line (BEOL) silicon compatible nonvolatile memory arrays are increasing realistic. 

A Verilog-A based model for the magneto-electric field effect transistor (MEFET) device is implemented and a variety of logic functions based on this device are proposed. These models are used to capture energy consumption and delay per switching event and to benchmark the MEFET with respect to CMOS. Single-source MEFET devices can be used for conventional logic gates like NAND, NOR, inverter and buffer and more complex circuits like the full adder. The dual source MEFET is an enhanced version of the MEFET device which functions like a spin multiplexer (spin-MUXer). Circuits using MEFETs require fewer components than CMOS to generate the same logic operation. These devices display a high on-off ratio., unlike many magneto-electric devices., and they operate at very low voltages., resulting in lower switching energy. Benchmarking results show that these devices perform better in terms of energy and delay., for implementing more complex functions., than the basic logic gates.