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Creators/Authors contains: "Droopad, Ravi"

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  1. ; ; ; ; ; ; (, Applied Physics Letters)
    Tensile-strained pseudomorphic Ge 1–x–y Sn x C y was grown on GaAs substrates by molecular beam epitaxy using carbon tetrabromide (CBr 4 ) at low temperatures (171–258 °C). High resolution x-ray diffraction reveals good crystallinity in all samples. Atomic force microscopy showed atomically smooth surfaces with a maximum roughness of 1.9 nm. The presence of the 530.5 cm −1 local vibrational mode of carbon in the Raman spectrum verifies substitutional C incorporation in Ge 1–x–y Sn x C y samples. X-ray photoelectron spectroscopy confirms carbon bonding with Sn and Ge without evidence of sp 2 or sp 3 carbon formation. The commonly observed Raman features corresponding to alternative carbon phases were not detected. Furthermore, no Sn droplets were visible in scanning electron microscopy, illustrating the synergy in C and Sn incorporation and the potential of Ge 1–x–y Sn x C y active regions for silicon-based lasers. 
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  2. ; ; ; ; ; ; (, Journal of Crystal Growth)
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