2D materials‐based device performance is significantly affected by film non‐uniformity, especially for large area devices. Here, it investigates the dependence of large area 2D MoS2phototransistor performance on film morphology through correlative mapping. Monolayer MoS2films are quazi‐epitaxially synthesized on C‐plane sapphire (Al2O3) substrates by chemical vapor deposition, and the growth time and molybdenum trioxide MoO3precursor volume are varied to obtain variations in film morphology. Raman, photoluminescence, transmittance, and photocurrent maps are generated and compared with each other to obtain a holistic understanding of large area 2D optoelectronic device performance. For example, it shows that the photoluminescence peak shift and intensity can be used to investigate strain and other defects across multiple film morphologies, giving insight into their effects on the photogenerated current in these devices. It also combines photocurrent and absorption maps to generate large area high‐resolution external quantum efficiency and internal quantum efficiency maps for the devices. This study demonstrates the benefit of correlative mapping in the understanding and advancement of large area 2D material‐based electronic and optoelectronic devices.
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null (Ed.)Demonstration of nanophotonic platform for metasurface-based refractive index sensing. Prototype results indicate that dramatic cost (.$5,000) and scale (e.g. portable, handheld) reductions are attainable in comparison to existing technologies with comparable sensitivity (An= 10-6).more » « less