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Computational prediction of good thermoelectric (TE) performance in several n-type doped Zintl phases, combined with successful experimental realization, has sparked interest in discovering new n-type dopable members of this family of materials. However, most known Zintls are typically only p-type dopable; prior successes in finding n-type Zintl phases have been largely serendipitous. Here, we go beyond previously synthesized Zintl phases and perform chemical substitutions in known n-type dopable ABX Zintl phases to discover new ones. We use first-principles calculations to predict their stability, potential for TE performance as well as their n-type dopability. Using this approach, we find 17 new ABX Zintl phases in the KSnSb structure type that are predicted to be stable. Several of these newly predicted phases (KSnBi, RbSnBi, NaGeP) are found to exhibit promising n-type TE performance and are n-type dopable. We propose these compounds for further experimental studies, especially KSnBi and RbSnBi, which are both predicted to be good TE materials with high electron concentrations due to self-doping by native defects, when grown under alkali-rich conditions. 

Engineering the thermal properties in solids is important for both fundamental physics ( e.g. electric and phonon transport) and device applications ( e.g. thermal insulating coating, thermoelectrics). In this paper, we report low thermal transport properties of four selenide compounds (BaAg 2 SnSe 4 , BaCu 2 GeSe 4 , BaCu 2 SnSe 4 and SrCu 2 GeSe 4 ) with experimentally-measured thermal conductivity as low as 0.31 ± 0.03 W m −1 K −1 at 673 K for BaAg 2 SnSe 4 . Density functional theory calculations predict κ < 0.3 W m −1 K −1 for BaAg 2 SnSe 4 due to scattering from weakly-bonded Ag–Ag dimers. Defect calculations suggest that achieving high hole doping levels in these materials could be challenging due to monovalent ( e.g. , Ag) interstitials acting as hole killers, resulting in overall low electrical conductivity in these compounds.