skip to main content

Search for: All records

Creators/Authors contains: "Fan, Z."

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Free, publicly-accessible full text available June 1, 2023
  2. Free, publicly-accessible full text available April 1, 2023
  3. Free, publicly-accessible full text available April 1, 2023
  4. Free, publicly-accessible full text available November 1, 2022
  5. Free, publicly-accessible full text available September 1, 2022
  6. Fast generation of personalized head-related transfer functions is essential for rendering spatial audio. In this paper we propose to generate head-related transfer functions using a single graphics processing unit (GPU). We optimize the implementation of the conventional boundary element solver on a GPU. The simulation of a single frequency can be completed in seconds. A psychoacoustic experiment is conducted to study the perceptual performance of the computed HRTFs. In general, perceptual accuracy in the back is better than that in the front.
  7. In this work, we investigate misfit dislocations in PbTe/PbSe heteroepitaxial systems using the concurrent atomistic–continuum (CAC) method. A potential model containing the long-range Coulombic interaction and short-range Buckingham potential is developed for the system. By considering the minimum potential energy of relaxed interface structures for various initial conditions and PbTe layer thicknesses, the equilibrium structure of misfit dislocations and the dislocation spacings in PbTe/PbSe(001) heteroepitaxial thin films are obtained as a function of the PbTe layer thicknesses grown on a PbSe substrate. The critical layer thickness above which misfit dislocations inevitably form, the structure of the misfit dislocations at themore »interfaces, and the dependence of average dislocation spacing on PbTe layer thickness are obtained and discussed. The simulation results provide an explanation for the narrowing of the spread of the distribution of misfit dislocation spacing as layer thickness increases in PbTe/PbSe(001) heteroepitaxy.« less