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Zheng, Zhenyi; Zhang, Yue; Lopez-Dominguez, Victor; Sánchez-Tejerina, Luis; Shi, Jiacheng; Feng, Xueqiang; Chen, Lei; Wang, Zilu; Zhang, Zhizhong; Zhang, Kun; et al (, Nature Communications)Abstract Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.more » « less
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Wang, Qing Hua; Bedoya-Pinto, Amilcar; Blei, Mark; Dismukes, Avalon H.; Hamo, Assaf; Jenkins, Sarah; Koperski, Maciej; Liu, Yu; Sun, Qi-Chao; Telford, Evan J.; et al (, ACS Nano)
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