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  1. A thin layer of Al 2 O 3 was employed as an interfacial layer between surface conductive hydrogen-terminated (H-terminated) diamond and MoO 3 to increase the distance between the hole accumulation layer in diamond and negatively charged states in the acceptor layer and, thus, reduce the Coulomb scattering and increase the hole mobility. The valence band offsets are found to be 2.7 and 3.1 eV for Al 2 O 3 /H-terminated diamond and MoO 3 /H-terminated diamond, respectively. Compared to the MoO 3 /H-terminated diamond structure, a higher hole mobility was achieved with Al 2 O 3 inserted as an interfacemore »layer. This work provides a strategy to achieve increased hole mobility of surface conductive diamond by using optimal interlayer along with high high electron affinity surface acceptor materials.« less
    Free, publicly-accessible full text available May 9, 2023
  2. Free, publicly-accessible full text available June 1, 2023
  3. Free, publicly-accessible full text available October 1, 2022