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GaN has recently been shown to host bright, photostable, defect single-photon emitters in the 600–700 nm wavelength range that are promising for quantum applications. Our studies have revealed the optical dipole structure, mechanisms associated with optical dipole dephasing, and the spin structure of these emitters. We have also discovered optically detected magnetic resonance (ODMR) in two distinct species of defects. In one group, we found negative optically detected magnetic resonance of a few percent associated with a metastable electronic state, whereas in the other, we found positive optically detected magnetic resonance of up to 30% associated with the ground and optically excited electronic states. We also established coherent control over a single defect’s ground-state spin. In this talk, we will present our results on the basic physics of these defects and also discuss the spin physics associated with the observed ODMR. 

Silicon vacancy (VSi) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their robust electronic and optical properties, including a long spin coherence lifetime and bright, stable emission. Here, we report the integration of VSi centers with a plasmonic nanocavity to Purcell enhance the emission, which is critical for scalable quantum networking. Employing a simple fabrication process, we demonstrate plasmonic cavities that support a nanoscale mode volume and exhibit an increase in the spontaneous emission rate with a measured Purcell factor of up to 48. In addition to investigating the optical resonance modes, we demonstrate an improvement in the optical stability of the spin-preserving resonant optical transitions relative to the radiation-limited value. The results highlight the potential of nanophotonic structures for advancing quantum networking technologies and emphasize the importance of optimizing emitter−cavity interactions for efficient quantum photonic applications. 

High-contrast optically detected magnetic resonance is a valuable property for reading out the spin of isolated defect colour centres at room temperature. Spin-active single defect centres have been studied in wide bandgap materials including diamond, SiC and hexagonal boron nitride, each with associated advantages for applications. We report the discovery of optically detected magnetic resonance in two distinct species of bright, isolated defect centres hosted in GaN. In one group, we find negative optically detected magnetic resonance of a few percent associated with a metastable electronic state, whereas in the other, we find positive optically detected magnetic resonance of up to 30% associated with the ground and optically excited electronic states. We examine the spin symmetry axis of each defect species and establish coherent control over a single defect’s ground-state spin. Given the maturity of the semiconductor host, these results are promising for scalable and integrated quantum sensing applications. 

GaN has recently been shown to host bright, photostable, defect single-photon emitters in the 600–700 nm wavelength range that are promising for quantum applications. The nature and origin of these defect emitters remain elusive. In this work, we study the optical dipole structures and orientations of these defect emitters using the defocused imaging technique. In this technique, the far-field radiation pattern of an emitter in the Fourier plane is imaged to obtain information about the structure of the optical dipole moment and its orientation in 3D. Our experimental results, backed by numerical simulations, show that these defect emitters in GaN exhibit a single dipole moment that is oriented almost perpendicular to the wurtzite crystal c-axis. Data collected from many different emitters show that the angular orientation of the dipole moment in the plane perpendicular to the c-axis exhibits a distribution that shows peaks centered at the angles corresponding to the nearest Ga–N bonds and also at the angles corresponding to the nearest Ga–Ga (or N–N) directions. Moreover, the in-plane angular distribution shows little difference among defect emitters with different emission wavelengths in the 600–700 nm range. Our work sheds light on the nature and origin of these GaN defect emitters. 

We demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss, molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]x∼2) mechanically coupled to PMN-PT piezoelectric transducers. Upon straining the V[TCNE]x films, the FMR frequency is tuned by more than 6 times the resonant linewidth with no change in Gilbert damping for samples with α = 6.5 × 10−5. We show this tuning effect is due to a strain-dependent magnetic anisotropy in the films and find the magnetoelastic coefficient |λs| ∼ (1–4.4) ppm, backed by theoretical predictions from density-functional theory calculations and magnetoelastic theory. Noting the rapidly expanding application space for strain-tuned FMR, we define a new metric for magnetostrictive materials, magnetostrictive agility, given by the ratio of the magnetoelastic coefficient to the FMR linewidth. This agility allows for a direct comparison between magnetostrictive materials in terms of their comparative efficacy for magnetoelectric applications requiring ultra-low loss magnetic resonance modulated by strain. With this metric, we show V[TCNE]x is competitive with other magnetostrictive materials, including YIG and Terfenol-D. This combination of ultra-narrow linewidth and magnetostriction, in a system that can be directly integrated into functional devices without requiring heterogeneous integration in a thin film geometry, promises unprecedented functionality for electric-field tuned microwave devices ranging from low-power, compact filters and circulators to emerging applications in quantum information science and technology. 

Abstract The recently discovered spin-active boron vacancy (V$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ ${}_B^{-}$) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system fromD_3htoC_2v. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing.