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Creators/Authors contains: "Galijasevic, S."

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  1. ; ( , Nonvolatile Memory Workshop)
    This paper introduces a mutual information (MI) maximization paradigm that adapts the locations and probabilities of write levels to iteratively increase the mutual information of the weakest bit channel and hence improve the reliability of its corresponding page. In this way, we seek a constellation of write levels that delivers the same amount of mutual information to the bit channel for each page, so that all pages are equally reliable. For simplicity, we consider the example of TLC Flash with an additive white Gaussian noise (AWGN) channel model, but the principle may be applied to denser cells and more realistic channel models. 
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