A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/
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Abstract β -Ga2O3Schottky barrier diodes (SBDs) and NiO/β -Ga2O3heterojunction diodes (HJDs) is reported. The fabricated devices showed a lowR on,spof 6.2 mΩ cm2for SBDs and 6.8 mΩ cm2for HJDs. HJDs showed a 0.8 V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ cm2. The devices also showed low reverse leakage current (<1 mA cm−2) and a breakdown voltage of ∼1.4 kV. These results offer an alternative, simpler route for fabricating high-performance kilovolt-classβ -Ga2O3diodes. -
Crozier, Peter A ; Morales, Adrià Marcos ; Leibovich, Matan ; Mohan, Sreyas ; Haluai, Piyush ; Tan, Mai ; Vincent, Joshua ; Gilankar, Advait ; Wang, Yifan ; Fernandez-Granda, Carlos ( , Microscopy and Microanalysis)
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Morales, Adrià Marcos ; Gilankar, Advait ; Manzorro, Ramon ; Haluai, Piyush ; Tan, Mai ; Vincent, Joshua L. ; Fernandez-Granda, Carlos ; Crozier, Peter A. ( , Microscopy and Microanalysis)
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Gilankar, Advait ; Miller, Benjamin K. ; Morales, Adrià Marcos ; Haluai, Piyush ; Tan, Mai ; Vincent, Joshua L. ; Fernandez-Granda, Carlos ; Crozier, Peter A. ( , Microscopy and Microanalysis)