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We recently applied carbonic anhydrase (CA) for the rapid catalytic conversion of carbon dioxide to enable the self-healing properties of concrete and in the development of a carbon-negative concrete replacement named Enzymatic Construction Material (ECM). Here, we explore the stability and carbonate generation ability of model molecular mimics of carbonic anhydrase under high pH and elevated temperatures relevant to long-term durability in cementitious and concrete-like materials. Molecular mimics include Zn2+-based organometallic complexes with an aromatic ligand tris(2-pyridylmethyl)amine, TPA, and with an aliphatic ligand cyclen, 1,4,7,10-tetraazacyclododecane. The Zn(TPA) and Zn(cyclen) complexes are stable in aqueous environments at standard pressures ranging from neutral to pH 13 and temperatures up to 120 °C, where CA is inactive. Under the temperature and pH conditions studied, organometallic degradation pathways do not involve the decomposition of either organic ligand but rather the dissociation of the complex that is reversible upon neutralization in the case of Zn(TPA). Zn(cyclen) is stable at high temperatures at pH 12 and above, resembling cementitious conditions for over 365 days with no signs of degradation. Separately, alkaline calcium-containing solutions with either 25 nM CA or 5 mM Zn(cyclen) catalyst demonstrated accelerated pH decreases compared to catalyst-free controls upon sparging with carbon dioxide because of the conversion of CO2 and H2O to HCO3– and H+. Notably, the inclusion of sub-molar concentrations of detergents, such as sodium dodecyl sulfate, in carbonate production reactions demonstrated no change in the reactivity of control solutions or those with the Zn(cyclen) catalyst but severely attenuated the conversion in CA-containing solutions concomitant with CA denaturation and loss of enzymatic activity. 

We report on THz emission in single-crystalline SnS2 in response to above bandgap excitation. Symmetry properties of THz generation suggest that its origin is an ultrafast surface shift current, a 2nd order nonlinear effect that can occur as a result of above-gap photoexcitation of a non-centrosymmetric semiconductor. Multilayer SnS2 can exist in several polytypes that differ in the layer stacking. Of those polytypes, 2H and 18R are centrosymmetric while 4H is not. While Raman spectroscopy suggests that the single crystalline SnS2 in our experiments is 2H, its THz emission has symmetry that are fully consistent with the P3m1 phase of 4H polytype. We hypothesize that the stacking disorder, where strain-free stacking faults that interrupt regions of 2H polytype, can break inversion symmetry and result in THz emission. These results lay the foundations for application of SnS2 as an efficient, stable, flexible THz source material, and highlight the use of THz spectroscopy as a sensitive tool for establishing symmetry properties of materials. 

Two-dimensional, 2D, niobium carbide MXene, Nb2CTx, has attracted attention due to its extraordinarily high photothermal conversion efficiency that has applications ranging from medicine, for tumor ablation, to solar energy conversion. Here, we characterize its electronic properties and investigate the ultrafast dynamics of its photoexcitations with a goal of shedding light onto the origins of its unique properties. Through density functional theory, DFT, calculations, we find that Nb2CTx is metallic, with a small but finite DOS at the Fermi level for all experimentally relevant terminations that can be achieved using HF or molten salt etching of the parent MAX phase, including –OH, –O, –F, –Cl, –Br, –I. In agreement with this prediction, THz spectroscopy reveals an intrinsic long-range conductivity of ∼60 Ω−1 cm−1, with significant charge carrier localization and a charge carrier density (∼1020 cm−3) comparable to Mo-based MXenes. Excitation with 800 nm pulses results in a rapid enhancement in photoconductivity, which decays to less than 25% of its peak value within several picoseconds, underlying efficient photothermal conversion. At the same time, a small fraction of photoinjected excess carriers persists for hundreds of picoseconds and can potentially be utilized in photocatalysis or other energy conversion applications. 

Garnering attention for high conductivity, nonlinear optical properties, and more, MXenes are water-processable 2D materials that are considered candidates for applications in electromagnetic interference shielding, optoelectronic and photonic devices among others. Herein we investigate the intrinsic and photoexcited conductivity in Nb 2 CT x, a MXene with reported high photothermal conversion efficiency. DFT calculations show that hydroxyl and/or fluorine-terminated or is metallic, in agreement with THz spectroscopy, which reveals the presence of free charge carriers that are highly localized over mesoscopic length scales. Photoexcitation of Nb 2 CT x, known to result in rapid heating of the crystal lattice, is found to produce additional free carriers and a transient enhancement of photoconductivity. Most photoexcited carriers decay over the sub-picosecond time scales while a small fraction remain for much longer, sub-nanoseconds, times. 

Abstract In this paper, we use Polyethylene Oxide (PEO) particles to control the morphology of Formamidinium (FA)-rich perovskite films and achieve large grains with improved optoelectronic properties. Consequently, a planar perovskite solar cell (PSC) is fabricated with additions of 5 wt% of PEO, and the highest PCE of 18.03% was obtained. This solar cell is also shown to retain up to 80% of its initial PCE after about 140 h of storage under the ambient conditions (average relative humidity of 62.5 ± 3.25%) in an unencapsulated state. Furthermore, the steady-state PCE of the PEO-modified PSC device remained stable for long (over 2500 s) under continuous illumination. This addition of PEO particles is shown to enable the tuning of the optoelectronic properties of perovskite films, improvements in the overall photophysical properties of PSCs, and an increase in resistance to the degradation of PSCs. 

Abstract Above‐band gap optical excitation of non‐centrosymmetric semiconductors can lead to the spatial shift of the center of electron charge in a process known as shift current. Shift current is investigated in single‐crystal SnS₂, a layered semiconductor with the band gap of ≈2.3 eV, by THz emission spectroscopy and first principles density functional theory (DFT). It is observed that normal incidence excitation with above gap (400 nm; 3.1 eV) pulses results in THz emission from 2H SnS₂() polytype, where such emission is nominally forbidden by symmetry. It is argued that the underlying symmetry breaking arises due to the presence of stacking faults that are known to be ubiquitous in SnS₂single crystals and construct a possible structural model of a stacking fault with symmetry properties consistent with the experimental observations. In addition to shift current, it is observed THz emission by optical rectification excited by below band gap (800 nm; 1.55 eV) pulses but it requires excitation fluence more than two orders of magnitude higher to produce same signal amplitude. These results suggest that ultrafast shift current in which can be excited with visible light in blue–green portion of the spectrum makes SnS₂a promising source material for THz photonics. 

Recently, we demonstrated that triphenylacetic acid could be used to seal dye molecules within MOF-5, but guest release required the digestion of the framework by treatment with acid. We prepared the sterically bulky photocapping group [bis-(3-nitro-benzyl)-amino]-(3-nitro-phenyl)-acetic acid ( PC1 ) that can prevent crystal violet dye diffusion from inside MOF-5 until removed by photolysis.