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Abstract — Photoluminescence Excitation Spectroscopy (PLE) is a contactless characterization technique to quantify Shockley-Reed-Hall (SRH) lifetimes and recombination velocities in direct band gap experimental semiconductor materials and devices. It is also useful as to evaluate surface passivation and intermediate fabrication processes, since it can be implemented without the need for development of effective contact technologies. In this paper, we present a novel experimental PLE system for precision-based quantification of the aforementioned parameters as well as a system for which absolute PLE characterization may occur. Absolute PLE measurements can be used to directly calculate VOC for new photovoltaic (PV) material systems and devices. Key system capabilities include a continuous excitation spectrum from 300 nm –1.1 μm, automated characterization, up to 1 nm wavelength resolution (up to 60x higher than prior work), and a reduced ellipsometry requirement for post-processing of data. We utilize a GaAs double heterostructure (DH) and an InP crystalline wafer as calibration standards in comparison with data from an LED-based PLE to demonstrate the validity of the results obtained from this new system. Index Terms – photovoltaic cells, photoluminescence, charge carrier lifetime, gallium arsenide, indium phosphide.