skip to main content

Search for: All records

Creators/Authors contains: "Halasyamani, P. Shiv"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Free, publicly-accessible full text available August 2, 2024
  2. Planar MO 3 (M = B, C, N) units have frequently been considered important structural components of novel birefringent crystal materials. An efficient approach for constructing new functional crystals is to simultaneously assemble multiple structural motifs together. Two compounds, Na 3 Rb 6 (CO 3 ) 3 (NO 3 ) 2 X·6H 2 O (X = Br and Cl), were synthesized by the integration of three kinds of anionic groups. More interestingly, the [CO 3 ] 2− and [NO 3 ] − groups in Na 3 Rb 6 (CO 3 ) 3 (NO 3 ) 2 X·6H 2 O are all coplanar with the aid of [NaO 7 ] 13− polyhedra, which can enhance the anisotropic polarizability. Na 3 Rb 6 (CO 3 ) 3 (NO 3 ) 2 X·6H 2 O have a large theoretical birefringence of ∼0.165 at 1064 nm and possess a short UV cut-off edge of ∼230 nm. Additionally, the two compounds exhibit good crystal growth habits. These properties illustrate that Na 3 Rb 6 (CO 3 ) 3 (NO 3 ) 2 X·6H 2 O are promising UV birefringent crystals. 
    more » « less
  3. Abstract

    Birefringent materials are widely used in various advanced optical systems, owing to their vital role in creating and controlling polarized light. Currently, Sn2+‐based compounds containing stereochemically active lone‐pair (SCALP) cations are extensively investigated and considered as one class of promising birefringent materials. To solve the problem of relatively narrow bandgap of Sn2+‐based compounds, alkali metals and multiple halogens are introduced to widen the bandgap during the research. Based on this strategy, four new Sn2+‐based halides, A2Sn2F5Cl and ASnFCl2(A = Rb and Cs), with large birefringence, short ultraviolet (UV) cutoff edge, and wide transparent range are successfully found. The birefringences of A2Sn2F5Cl (A = Rb and Cs) are 0.31 and 0.28 at 532 nm, respectively, which are among the largest in Sn‐based halide family. Remarkably, A2Sn2F5Cl possess relatively shorter UV cutoff edge (<300 nm) and broad infrared (IR) transparent range (up to 16.6 µm), so they can become promising candidates as birefringent materials applied in both UV and IR regions. In addition, a comprehensive analysis on crystal structures and structure–property relationship of metal Sn2+‐based halides is performed to fully understand this family. Therefore, this work provides insights into designing birefringent materials with balanced optical properties.

    more » « less
  4. KBiNb 2 O 7 was prepared from RbBiNb 2 O 7 by a sequence of cation exchange reactions which first convert RbBiNb 2 O 7 to LiBiNb 2 O 7 , before KBiNb 2 O 7 is formed by a further K-for-Li cation exchange. A combination of neutron, synchrotron X-ray and electron diffraction data reveal that KBiNb 2 O 7 adopts a polar, layered, perovskite structure (space group A 11 m ) in which the BiNb 2 O 7 layers are stacked in a (0, ½, z ) arrangement, with the K + cations located in half of the available 10-coordinate interlayer cation sites. The inversion symmetry of the phase is broken by a large displacement of the Bi 3+ cations parallel to the y -axis. HAADF-STEM images reveal that KBiNb 2 O 7 exhibits frequent stacking faults which convert the (0, ½, z ) layer stacking to (½, 0, z ) stacking and vice versa , essentially switching the x - and y -axes of the material. By fitting the complex diffraction peak shape of the SXRD data collected from KBiNb 2 O 7 it is estimated that each layer has approximately a 9% chance of being defective – a high level which is attributed to the lack of cooperative NbO 6 tilting in the material, which limits the lattice strain associated with each fault. 
    more » « less