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We present a rapid liquid metal printing process (CLMP) enabling fabrication of high-mobility metal oxide semiconducting channels in less than 3 seconds. We use this process to engineer heterostructure TFTs with channels consisting of 3 nm layers of In2O3 and Ga2O3 with improved subthreshold slope and enhanced on-state performance (uaveā¼14cm2/Vs) . We report the influence of deposition temperature and speed, investigating crystallinity and grain morphology of this class of 2D oxide semiconductors.more » « less
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Hamlin, Andrew B. ; Agnew, Simon A. ; Bonner, Justin C. ; Hsu, Julia W. ; Scheideler, William J. ( , Nano Letters)
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Huddy, Julia E. ; Rahman, Md Saifur ; Hamlin, Andrew B. ; Ye, Youxiong ; Scheideler, William J. ( , Cell Reports Physical Science)