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β -Ga2O3 is actively touted as the next ultrawide bandgap material for power electronics. To fully utilize its high intrinsic critical electric field, development of high-quality robust large-barrier height junctions is essential. To this end, various high-work function metals, metal oxides, and hole-conducting oxides have been deposited on Ga2O3, primarily formed by sputter deposition. Unfortunately, reports to date indicate that measured barrier heights often deviate from the Schottky–Mott model as well as x-ray photoelectron spectroscopy (XPS) extractions of conduction band offsets, suggesting significant densities of electrically active defects at these junctions. We report Schottky diodes made from noble metal oxides, IrO2 and RuO2, deposited by ozone molecular beam epitaxy (ozone MBE) with barrier heights near 1.8 eV. These barriers show close agreement across extraction methods and robust to high surface electric fields upward of 6 MV/cm and 60 A/cm2 reverse current without degradation. 

Abstract It has been suggested that Ba₃In₂O₆might be a high-T_csuperconductor. Experimental investigation of the properties of Ba₃In₂O₆was long inhibited by its instability in air. Recently epitaxial Ba₃In₂O₆with a protective capping layer was demonstrated, which finally allows its electronic characterization. The optical bandgap of Ba₃In₂O₆is determined to be 2.99 eV in-the (001) plane and 2.83 eV along thec-axis direction by spectroscopic ellipsometry. First-principles calculations were carried out, yielding a result in good agreement with the experimental value. Various dopants were explored to induce (super-)conductivity in this otherwise insulating material. NeitherA- norB-site doping proved successful. The underlying reason is predominately the formation of oxygen interstitials as revealed by scanning transmission electron microscopy and first-principles calculations. Additional efforts to induce superconductivity were investigated, including surface alkali doping, optical pumping, and hydrogen reduction. To probe liquid-ion gating, Ba₃In₂O₆was successfully grown epitaxially on an epitaxial SrRuO₃bottom electrode. So far none of these efforts induced superconductivity in Ba₃In₂O_6,leaving the answer to the initial question of whether Ba₃In₂O₆is a high-T_csuperconductor to be ‘no’ thus far.